ECR position etching for high selectivity and high-rate N+ poly-Si patterning

Seiji Samukawa, Masami Sasaki, Yasuhiro Suzuki, Sumio Mori

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

A novel electron cyclotron resonance (ECR) plasma etching technology is described that produces simultaneously highly selective, high-rate, and anisotropic n+ poly-Si etching at a low acceleration voltage. ECR position etching for n+ poly-Si pattern fabrication is discussed. In this technology, a substrate is located at the ECR position in a plasma chamber, and etching is carried out without RF bias power. Due to the low ion energy, high ion current and highly collimated ion flux at the ECR position, n + poly-Si etching with a high selectivity and a high rate can be realized. The n+ poly-Si etching rate at the ECR position is 3300 A/min, and an anisotropic etching profile is realized by using Cl2 etching gas. The selectivity ratio of n+ poly-Si to SiO2 etching is 260. These etching characteristics are explained by low ion energy, high ion current density and highly collimated ion flux at the ECR position.

Original languageEnglish
Article number5727438
Pages (from-to)1-2
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
DOIs
Publication statusPublished - 1990 Dec 1
Externally publishedYes
Event1990 Symposium on VLSI Technology - Honolulu, HI, United States
Duration: 1990 Jun 41990 Jun 7

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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