A novel electron cyclotron resonance (ECR) plasma etching technology is described that produces simultaneously highly selective, high-rate, and anisotropic n+ poly-Si etching at a low acceleration voltage. ECR position etching for n+ poly-Si pattern fabrication is discussed. In this technology, a substrate is located at the ECR position in a plasma chamber, and etching is carried out without RF bias power. Due to the low ion energy, high ion current and highly collimated ion flux at the ECR position, n + poly-Si etching with a high selectivity and a high rate can be realized. The n+ poly-Si etching rate at the ECR position is 3300 A/min, and an anisotropic etching profile is realized by using Cl2 etching gas. The selectivity ratio of n+ poly-Si to SiO2 etching is 260. These etching characteristics are explained by low ion energy, high ion current density and highly collimated ion flux at the ECR position.
|Number of pages||2|
|Journal||Digest of Technical Papers - Symposium on VLSI Technology|
|Publication status||Published - 1990 Dec 1|
|Event||1990 Symposium on VLSI Technology - Honolulu, HI, United States|
Duration: 1990 Jun 4 → 1990 Jun 7
ASJC Scopus subject areas
- Electrical and Electronic Engineering