Early stage of growth of a perylene diimide derivative thin film growth on various Si(001) substrates

Matthieu Petit, Ryoma Hayakawa, Yutaka Wakayama, Toyohiro Chikyow

Research output: Contribution to journalArticlepeer-review

28 Citations (Scopus)

Abstract

This study deals with the growth mode of N,N′-dipenthyl-3,4,9,10- perylenetetracarboxylic diimide (PTCDI-5C) thin films from less than 1 monolayer to 23 monolayers thick. The effects of growth temperature and the thickness and nature of the substrates-SiO2 on Si(001) or octadecyltrichlorosilane (OTS) self-assembled monolayer terminated Si(001) surfaces-are discussed. Thin films were deposited from a homemade Knudsen cell by using a hot-wall deposition technique. Films were analyzed by atomic force microscopy, X-ray diffraction, and X-ray reflectivity. Films exhibited a (001) orientation with a 1.63 nm d spacing, and a metastable thin film phase was observed without any distinction of the nature of the substrate. However, differences were noticed in the early stages of growth: PTCDI-5C/SiO2 first monolayers presented a Stransky-Krastanov growth mode, whereas PTCDI-5C/OTS first monolayers showed a more complex mode with incomplete wetting of the substrate surface. Differences between the two morphologies softened as the film thickness increased.

Original languageEnglish
Pages (from-to)12747-12751
Number of pages5
JournalJournal of Physical Chemistry C
Volume111
Issue number34
DOIs
Publication statusPublished - 2007 Aug 30

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films

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