TY - JOUR
T1 - Dynamics of radio-photoluminescence and thermally-stimulated luminescence in KBr:Sm
AU - Okada, Go
AU - Fujimoto, Yutaka
AU - Tanaka, Hironori
AU - Kasap, Safa
AU - Yanagida, Takayuki
N1 - Funding Information:
Acknowledgements This research was co-supported by a Grant-in-Aid for Scientific Research (A) (26249147) and Grant-in-Aid for Research Activity start-up (15H06409) from the Ministry of Education, Culture, Sports, Science and Technology of the Japanese government (MEXT). It is also partially supported by the Adaptable and Seamless Technology transfer Program (A-STEP) and Matching Planner Program by the Japan Science and Technology Agency (JST), the Murata Science Foundation, and a cooperative research project of the Research Institute of Electronics, Shizuoka University.
Publisher Copyright:
© 2017, Springer Science+Business Media, LLC.
PY - 2017/11/1
Y1 - 2017/11/1
N2 - Sm-doped KBr single crystals were prepared by the Bridgman–Stockbarger technique. The samples show both radio-photoluminescence (RPL) and thermally-stimulated luminescence (TSL). The RPL is due to the valence change of the Sm ion (Sm3+ → Sm2+), induced by X-rays, so the photoluminescence emission by Sm2+ appears as a result of irradiation and the intensity increases with the irradiation dose. The emission of Sm2+ is due to the 5d–4f transitions. The RPL response seems to be related with the thermally-stimulated luminescence (TSL) on the same samples. The TSL emission is predominantly due to Sm2+, instead of Sm3+, indicating that capture of a hole by Sm2+ takes place. As a result of TSL (or heat treatment), Sm2+ reverts to Sm3+ as the original state. The thermal activation energies have been derived from TSL isothermal analyses, and the obtained values are 1.42, 1.55, 1.65, and 1.74 eV.
AB - Sm-doped KBr single crystals were prepared by the Bridgman–Stockbarger technique. The samples show both radio-photoluminescence (RPL) and thermally-stimulated luminescence (TSL). The RPL is due to the valence change of the Sm ion (Sm3+ → Sm2+), induced by X-rays, so the photoluminescence emission by Sm2+ appears as a result of irradiation and the intensity increases with the irradiation dose. The emission of Sm2+ is due to the 5d–4f transitions. The RPL response seems to be related with the thermally-stimulated luminescence (TSL) on the same samples. The TSL emission is predominantly due to Sm2+, instead of Sm3+, indicating that capture of a hole by Sm2+ takes place. As a result of TSL (or heat treatment), Sm2+ reverts to Sm3+ as the original state. The thermal activation energies have been derived from TSL isothermal analyses, and the obtained values are 1.42, 1.55, 1.65, and 1.74 eV.
UR - http://www.scopus.com/inward/record.url?scp=85023740934&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85023740934&partnerID=8YFLogxK
U2 - 10.1007/s10854-017-7496-z
DO - 10.1007/s10854-017-7496-z
M3 - Article
AN - SCOPUS:85023740934
VL - 28
SP - 15980
EP - 15986
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
SN - 0957-4522
IS - 21
ER -