TY - JOUR
T1 - Dynamics of carrier tunneling and recombination in asymmetric coupled InGaN multiple quantum wells
AU - Weng, Guoen
AU - Chen, Shaoqiang
AU - Zhang, Baoping
AU - Hu, Xiaobo
AU - Kuboya, Shigeyuki
AU - Onabe, Kentaro
N1 - Funding Information:
Recruitment Program of Global Experts (1000 Talent Plan) of China; National Natural Science Foundation of China (61704055, 11474235, 61106044).
Publisher Copyright:
© 2017 Optical Society of America.
PY - 2017/10/2
Y1 - 2017/10/2
N2 - In this work, dynamics of carrier tunneling and recombination in InGaN-based asymmetric coupled multiple quantum wells (AC-MQWs) are systematically studied by excitation power-dependent and temperature-dependent photoluminescence (PL) measurements. With different pumping wavelengths of 405 and 325 nm, distinctly different PL spectral evolutions are observed, which could be well explained by the proposed anomalous carrier “reverse tunneling” based on the forbidden 1h→2e transitions in the AC-MQWs. The forbidden transitions are identified through the well agreement between the measured photo-modulated reflectance (PR) spectrum and the calculated interband transition energies. Our results indicate that, by ingeniously designing the MQW structure of the InGaN-based optoelectronic devices, it is possible to realize a specific interband optical transition which is even not allowed by the selection rule, and thereby effectively improve the carrier distribution across the QWs through the conventional and/or anomalous “reverse” carrier tunneling.
AB - In this work, dynamics of carrier tunneling and recombination in InGaN-based asymmetric coupled multiple quantum wells (AC-MQWs) are systematically studied by excitation power-dependent and temperature-dependent photoluminescence (PL) measurements. With different pumping wavelengths of 405 and 325 nm, distinctly different PL spectral evolutions are observed, which could be well explained by the proposed anomalous carrier “reverse tunneling” based on the forbidden 1h→2e transitions in the AC-MQWs. The forbidden transitions are identified through the well agreement between the measured photo-modulated reflectance (PR) spectrum and the calculated interband transition energies. Our results indicate that, by ingeniously designing the MQW structure of the InGaN-based optoelectronic devices, it is possible to realize a specific interband optical transition which is even not allowed by the selection rule, and thereby effectively improve the carrier distribution across the QWs through the conventional and/or anomalous “reverse” carrier tunneling.
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U2 - 10.1364/OE.25.024745
DO - 10.1364/OE.25.024745
M3 - Article
AN - SCOPUS:85030479182
VL - 25
SP - 24745
EP - 24755
JO - Optics Express
JF - Optics Express
SN - 1094-4087
IS - 20
ER -