Dynamics of carrier tunneling and recombination in asymmetric coupled InGaN multiple quantum wells

Guoen Weng, Shaoqiang Chen, Baoping Zhang, Xiaobo Hu, Shigeyuki Kuboya, Kentaro Onabe

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

In this work, dynamics of carrier tunneling and recombination in InGaN-based asymmetric coupled multiple quantum wells (AC-MQWs) are systematically studied by excitation power-dependent and temperature-dependent photoluminescence (PL) measurements. With different pumping wavelengths of 405 and 325 nm, distinctly different PL spectral evolutions are observed, which could be well explained by the proposed anomalous carrier “reverse tunneling” based on the forbidden 1h→2e transitions in the AC-MQWs. The forbidden transitions are identified through the well agreement between the measured photo-modulated reflectance (PR) spectrum and the calculated interband transition energies. Our results indicate that, by ingeniously designing the MQW structure of the InGaN-based optoelectronic devices, it is possible to realize a specific interband optical transition which is even not allowed by the selection rule, and thereby effectively improve the carrier distribution across the QWs through the conventional and/or anomalous “reverse” carrier tunneling.

Original languageEnglish
Pages (from-to)24745-24755
Number of pages11
JournalOptics Express
Volume25
Issue number20
DOIs
Publication statusPublished - 2017 Oct 2

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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