Dynamically stabilized growth of polar oxides: The case of MgO(111)

Vlado K. Lazarov, Zhuhua Cai, Kenta Yoshida, K. Honglian L. Zhang, M. Weinert, Katherine S. Ziemer, Philip J. Hasnip

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)

Abstract

By using MgO(111) as a model system for polar oxide film growth, we show by first-principles calculations that H acts as a surfactant, i.e., the H changes its position and bonding during the growth process, remaining in the surface region. Continuous presence of H during the growth of MgO(111) film efficiently removes the microscopic dipole moment, thus enabling the growth of perfect fcc-ordered MgO(111) films. These theoretical predictions are confirmed experimentally by molecular beam epitaxy single crystal growth of MgO(111) on SiC(0001).

Original languageEnglish
Article number056101
JournalPhysical review letters
Volume107
Issue number5
DOIs
Publication statusPublished - 2011 Jul 28

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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