Dynamic polarization rotation in pump-and-probe transients of anisotropically strained M-plane GaN films on LiAlO2

K. Omae, T. Flissikowski, P. Misra, O. Brandt, H. T. Grahn, K. Kojima, Y. Kawakami

Research output: Contribution to journalConference articlepeer-review

Abstract

We report on the dynamical polarization rotation of anisotropically strained M-plane GaN films on LiAlO2. Since M-plane GaN films on LiAlO2 exhibit a large anisotropic in-plane strain, the wavefunction of the highest (second highest) valence band becomes completely |x〉 (|z〉) like, where x and z are parallel to the a- and c-axis, respectively, of the wurtzite crystal structure. Therefore, the absorption spectra for M-plane GaN depend strongly on the polarization of the incoming light beam. As a result, a static rotation of the polarization vector appears after transmission of linearly polarized light. This rotation can be dynamically controlled by a selective bleaching of the absorption of only one or both valence bands using carriers excited by additional pumping. For an incoming polarization angle of 60°, the maximum dynamic rotation reaches 35°, while the maximum static polarization rotation is about 40°.

Original languageEnglish
Pages (from-to)1862-1865
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume3
DOIs
Publication statusPublished - 2006 Jul 31
Externally publishedYes
Event6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany
Duration: 2005 Aug 282005 Sep 2

ASJC Scopus subject areas

  • Condensed Matter Physics

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