We report on the dynamical polarization rotation of anisotropically strained M-plane GaN films on LiAlO2. Since M-plane GaN films on LiAlO2 exhibit a large anisotropic in-plane strain, the wavefunction of the highest (second highest) valence band becomes completely |x〉 (|z〉) like, where x and z are parallel to the a- and c-axis, respectively, of the wurtzite crystal structure. Therefore, the absorption spectra for M-plane GaN depend strongly on the polarization of the incoming light beam. As a result, a static rotation of the polarization vector appears after transmission of linearly polarized light. This rotation can be dynamically controlled by a selective bleaching of the absorption of only one or both valence bands using carriers excited by additional pumping. For an incoming polarization angle of 60°, the maximum dynamic rotation reaches 35°, while the maximum static polarization rotation is about 40°.
|Number of pages||4|
|Journal||Physica Status Solidi (C) Current Topics in Solid State Physics|
|Publication status||Published - 2006 Jul 31|
|Event||6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany|
Duration: 2005 Aug 28 → 2005 Sep 2
ASJC Scopus subject areas
- Condensed Matter Physics