Abstract
A concentration wave method for several interpenetrating Bravais sublattices is presented by considering the intralayer and interlayer effective interactions and the difference between the surface layers and the deeper layers in III-V alloys. The ground state ordered structures of ternary III - V semiconductor alloys are deduced and a dynamic model is established.
| Original language | English |
|---|---|
| Pages (from-to) | 111-116 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 340 |
| Publication status | Published - 1994 Dec 1 |
| Event | Proceedings of the MRS Symposium - San Francisco, CA, USA Duration: 1994 Apr 4 → 1994 Apr 7 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials