Dynamic model of epitaxial growth in ternary III-V semiconductor alloys

Bing Lin Gu, Zhi Feng Huang, Jun Ni, Jing Zhi Yu, Kaoru Ohno, Yoshiyuki Kawazoe

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

A concentration-wave method for several interpenetrating Bravais sublattices is presented by considering the intralayer and interlayer effective interactions and the difference between the surface layers and the deep layers of ternary III-V alloys. The most stable ordered structures of ternary III-V semiconductor alloys are deduced and a dynamic model for epitaxial growth is proposed. The present results are compared with the experimental observations, and the relations between interaction parameters are also given.

Original languageEnglish
Pages (from-to)7104-7111
Number of pages8
JournalPhysical Review B
Volume51
Issue number11
DOIs
Publication statusPublished - 1995 Jan 1

ASJC Scopus subject areas

  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Dynamic model of epitaxial growth in ternary III-V semiconductor alloys'. Together they form a unique fingerprint.

Cite this