Abstract
A novel dynamic L-I characteristics measurement is proposed for analyzing intermodulation distortion in LDs. The dynamic L-I characteristics show a good correlation with the intermodulation distortion characteristics compared with the static L-I characteristics and enabled to analyze the distortion mechanism in the LDs caused by relaxation oscillation and an RF leakage current.
| Original language | English |
|---|---|
| Pages (from-to) | 177-178 |
| Number of pages | 2 |
| Journal | Conference Digest - IEEE International Semiconductor Laser Conference |
| Publication status | Published - 1996 Dec 1 |
| Externally published | Yes |
| Event | Proceedings of the 1996 15th IEEE International Semiconductor Laser Conference, ISLC - Haifa, Isr Duration: 1996 Oct 13 → 1996 Oct 18 |
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering