Dynamic Injection MNOS (DIMNOS) memory devices are proposed which feature high speed writing, 5 V drain voltate and a dynamic RAM and MNOS backup. These devices have one or two control gates and one MNOS memory between the control gates and field SiO//2 layer. In the experimental results, N-channel Si-gate DIMNOS memory devices are written as fully as conventional MNOS memories in less than 50 nanoseconds. Furthermore, in the dynamic inhibited writing mode, writing is indeed inhibited with pulse widths shorter than 1. 0 msec if the number of inhibited writing attempts is kept to less than 10**3 by writing pulse shape improvement.
|Number of pages||9|
|Publication status||Published - 1980 Jan 1|
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