Dynamic ferromagnetic proximity effect in photoexcited semiconductors

Gerrit E.W. Bauer; Arne Brataas; Yaroslav Tserkovnyak; Bertrand I. Halperin; Maciej Zwierzycki; Paul J. Kelly

doi:10.1103/PhysRevLett.92.126601

Dynamic ferromagnetic proximity effect in photoexcited semiconductors

Gerrit E.W. Bauer, Arne Brataas, Yaroslav Tserkovnyak, Bertrand I. Halperin, Maciej Zwierzycki, Paul J. Kelly

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

The metal and semiconductor-based magnetoelectronics were studied in terms of coherent spin accumulations. Semiconductor-based magnetoelectronics is motivated by the prospect of integrating new functionalities with conventional semiconductor electronics. The polarization state was monitored by time-dependent Farady rotation measurements of the coherent spin precession in an applied magnetic field. It is observed that in the first 50 ps or so, the photoexcited carriers screen the Schottky barrier efficiently.

Original language	English
Article number	126601
Pages (from-to)	126601-1-126601-4
Journal	Physical review letters
Volume	92
Issue number	12
DOIs	https://doi.org/10.1103/PhysRevLett.92.126601
Publication status	Published - 2004 Mar 26
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1103/PhysRevLett.92.126601

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title = "Dynamic ferromagnetic proximity effect in photoexcited semiconductors",

abstract = "The metal and semiconductor-based magnetoelectronics were studied in terms of coherent spin accumulations. Semiconductor-based magnetoelectronics is motivated by the prospect of integrating new functionalities with conventional semiconductor electronics. The polarization state was monitored by time-dependent Farady rotation measurements of the coherent spin precession in an applied magnetic field. It is observed that in the first 50 ps or so, the photoexcited carriers screen the Schottky barrier efficiently.",

author = "Bauer, {Gerrit E.W.} and Arne Brataas and Yaroslav Tserkovnyak and Halperin, {Bertrand I.} and Maciej Zwierzycki and Kelly, {Paul J.}",

note = "Funding Information: We thank D. D. Awschalom, Y. Kato, and R. J. Epstein for helpful discussions on the Faraday rotation ex?>periments. This work has been supported by the FOM, by the NEDO joint research program “Nano Magneto?>electronics,” by the Norwegian Research Council “NanoMat,” DARPA Grant No. MDA 972-01-1-0024, by the European Commission{\textquoteright}s RT Network Computa?>tional Magnetoelectronics (Contract No. HPRN-CT-2000-00143), and by KBN Grant No. PBZ-KBN-044/P03-2001.",

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doi = "10.1103/PhysRevLett.92.126601",

language = "English",

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AU - Bauer, Gerrit E.W.

AU - Brataas, Arne

AU - Tserkovnyak, Yaroslav

AU - Halperin, Bertrand I.

AU - Zwierzycki, Maciej

AU - Kelly, Paul J.

N1 - Funding Information: We thank D. D. Awschalom, Y. Kato, and R. J. Epstein for helpful discussions on the Faraday rotation ex?>periments. This work has been supported by the FOM, by the NEDO joint research program “Nano Magneto?>electronics,” by the Norwegian Research Council “NanoMat,” DARPA Grant No. MDA 972-01-1-0024, by the European Commission’s RT Network Computa?>tional Magnetoelectronics (Contract No. HPRN-CT-2000-00143), and by KBN Grant No. PBZ-KBN-044/P03-2001.

PY - 2004/3/26

Y1 - 2004/3/26

N2 - The metal and semiconductor-based magnetoelectronics were studied in terms of coherent spin accumulations. Semiconductor-based magnetoelectronics is motivated by the prospect of integrating new functionalities with conventional semiconductor electronics. The polarization state was monitored by time-dependent Farady rotation measurements of the coherent spin precession in an applied magnetic field. It is observed that in the first 50 ps or so, the photoexcited carriers screen the Schottky barrier efficiently.

AB - The metal and semiconductor-based magnetoelectronics were studied in terms of coherent spin accumulations. Semiconductor-based magnetoelectronics is motivated by the prospect of integrating new functionalities with conventional semiconductor electronics. The polarization state was monitored by time-dependent Farady rotation measurements of the coherent spin precession in an applied magnetic field. It is observed that in the first 50 ps or so, the photoexcited carriers screen the Schottky barrier efficiently.

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Dynamic ferromagnetic proximity effect in photoexcited semiconductors

Abstract

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