Dynamic chemical mapping near a Si/SiO2 interface at elevated temperatures using plasmon-loss images

K. Sasaki, S. Tsukimoto, M. Konno, T. Kamino, H. Saka

    Research output: Contribution to journalArticle

    6 Citations (Scopus)

    Abstract

    Plasmon-loss imaging was applied to chemical mapping during an in-situ heating experiment. The technique was applied to observation of vibration of a Si/SiO2 interface which took place during reduction of SiO2 at high temperature. The chemical maps of Si and SiO2 were recorded dynamically using a conventional TV-VTR system at a time resolution of 1/30 s.

    Original languageEnglish
    Pages (from-to)12-16
    Number of pages5
    JournalJournal of Microscopy
    Volume203
    Issue number1
    DOIs
    Publication statusPublished - 2001 Aug 6

    Keywords

    • Electron energy loss spectroscopy
    • In-situ chemical mapping
    • Plasmon-loss
    • Si/SiO interface

    ASJC Scopus subject areas

    • Pathology and Forensic Medicine
    • Histology

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