Characteristics in the motion of dislocations generated from scratches in GaAs doped with In at a concentration of 2×1020 atoms/cm3 are investigated and are compared with those in undoped GaAs. α dislocations in In-doped GaAs are found to be immovable under stress lower than 10 MPa in the temperature range 350-750°C. Such immovability under low stress is not found for β dislocations in In-doped GaAs and for both α and β dislocations in undoped GaAs.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)