Dynamic characteristics of dislocations in indium-doped gallium arsenide crystal

Ichiro Yonenaga; Koji Sumino; Koji Yamada

doi:10.1063/1.96541

Dynamic characteristics of dislocations in indium-doped gallium arsenide crystal

Ichiro Yonenaga, Koji Sumino, Koji Yamada

Materials Design Division

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

Characteristics in the motion of dislocations generated from scratches in GaAs doped with In at a concentration of 2×10²⁰ atoms/cm³ are investigated and are compared with those in undoped GaAs. α dislocations in In-doped GaAs are found to be immovable under stress lower than 10 MPa in the temperature range 350-750°C. Such immovability under low stress is not found for β dislocations in In-doped GaAs and for both α and β dislocations in undoped GaAs.

Original language	English
Pages (from-to)	326-328
Number of pages	3
Journal	Applied Physics Letters
Volume	48
Issue number	5
DOIs	https://doi.org/10.1063/1.96541
Publication status	Published - 1986

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "Characteristics in the motion of dislocations generated from scratches in GaAs doped with In at a concentration of 2×1020 atoms/cm3 are investigated and are compared with those in undoped GaAs. α dislocations in In-doped GaAs are found to be immovable under stress lower than 10 MPa in the temperature range 350-750°C. Such immovability under low stress is not found for β dislocations in In-doped GaAs and for both α and β dislocations in undoped GaAs.",

author = "Ichiro Yonenaga and Koji Sumino and Koji Yamada",

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AU - Yonenaga, Ichiro

AU - Sumino, Koji

AU - Yamada, Koji

PY - 1986

Y1 - 1986

N2 - Characteristics in the motion of dislocations generated from scratches in GaAs doped with In at a concentration of 2×1020 atoms/cm3 are investigated and are compared with those in undoped GaAs. α dislocations in In-doped GaAs are found to be immovable under stress lower than 10 MPa in the temperature range 350-750°C. Such immovability under low stress is not found for β dislocations in In-doped GaAs and for both α and β dislocations in undoped GaAs.

AB - Characteristics in the motion of dislocations generated from scratches in GaAs doped with In at a concentration of 2×1020 atoms/cm3 are investigated and are compared with those in undoped GaAs. α dislocations in In-doped GaAs are found to be immovable under stress lower than 10 MPa in the temperature range 350-750°C. Such immovability under low stress is not found for β dislocations in In-doped GaAs and for both α and β dislocations in undoped GaAs.

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Dynamic characteristics of dislocations in indium-doped gallium arsenide crystal

Abstract

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