Dynamic characteristics of dislocations in indium-doped gallium arsenide crystal

Ichiro Yonenaga, Koji Sumino, Koji Yamada

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)

Abstract

Characteristics in the motion of dislocations generated from scratches in GaAs doped with In at a concentration of 2×1020 atoms/cm3 are investigated and are compared with those in undoped GaAs. α dislocations in In-doped GaAs are found to be immovable under stress lower than 10 MPa in the temperature range 350-750°C. Such immovability under low stress is not found for β dislocations in In-doped GaAs and for both α and β dislocations in undoped GaAs.

Original languageEnglish
Pages (from-to)326-328
Number of pages3
JournalApplied Physics Letters
Volume48
Issue number5
DOIs
Publication statusPublished - 1986

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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