Abstract
Characteristics in the motion of dislocations generated from scratches in GaAs doped with In at a concentration of 2×1020 atoms/cm3 are investigated and are compared with those in undoped GaAs. α dislocations in In-doped GaAs are found to be immovable under stress lower than 10 MPa in the temperature range 350-750°C. Such immovability under low stress is not found for β dislocations in In-doped GaAs and for both α and β dislocations in undoped GaAs.
Original language | English |
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Pages (from-to) | 326-328 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 48 |
Issue number | 5 |
DOIs | |
Publication status | Published - 1986 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)