Dynamic characteristics of dislocations in highly boron-doped silicon

I. Yonenaga, T. Taishi, X. Huang, K. Hoshikawa

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25 Citations (Scopus)


The dynamic behavior of dislocations in highly boron (B)-doped Si crystals with concentration up to 2.5 × 1020 cm-3 is investigated using the etch pit technique. Suppression of the generation of dislocations from a surface scratch is found for B-doped Si and the critical stress for dislocation generation increases with B concentration, which is interpreted in terms of dislocation locking due to impurity segregation. The velocity of dislocations in B-doped crystals is revealed to increase by increasing the B concentration.

Original languageEnglish
Pages (from-to)5788-5790
Number of pages3
JournalJournal of Applied Physics
Issue number10
Publication statusPublished - 2001 May 15

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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