Dynamic characteristics of dislocations in highly boron-doped silicon

I. Yonenaga; T. Taishi; X. Huang; K. Hoshikawa

doi:10.1063/1.1367407

Dynamic characteristics of dislocations in highly boron-doped silicon

I. Yonenaga, T. Taishi, X. Huang, K. Hoshikawa

Materials Design Division

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

The dynamic behavior of dislocations in highly boron (B)-doped Si crystals with concentration up to 2.5 × 10²⁰ cm^-3 is investigated using the etch pit technique. Suppression of the generation of dislocations from a surface scratch is found for B-doped Si and the critical stress for dislocation generation increases with B concentration, which is interpreted in terms of dislocation locking due to impurity segregation. The velocity of dislocations in B-doped crystals is revealed to increase by increasing the B concentration.

Original language	English
Pages (from-to)	5788-5790
Number of pages	3
Journal	Journal of Applied Physics
Volume	89
Issue number	10
DOIs	https://doi.org/10.1063/1.1367407
Publication status	Published - 2001 May 15

ASJC Scopus subject areas

Physics and Astronomy(all)

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AU - Huang, X.

AU - Hoshikawa, K.

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Dynamic characteristics of dislocations in highly boron-doped silicon

Abstract

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