Dynamic characteristics of dislocations in Ge-doped and (Ge+B) codoped silicon

I. Yonenaga, T. Taishi, X. Huang, K. Hoshikawa

Research output: Contribution to journalArticlepeer-review

34 Citations (Scopus)


The dynamic behavior of dislocations in heavily germanium (Ge)-doped, and Ge and boron (B) codoped silicon (Si) crystals was investigated using etch pit technique. Strong suppression of the generation of dislocations was found for Ge and B codoped Si in comparison with that observed for Ge-doped and B-doped Si. It was found that the velocity of dislocations in Ge and B codoped Si crystals was lower than that of dislocations in B-doped, Ge-doped, and undoped Si.

Original languageEnglish
Pages (from-to)265-269
Number of pages5
JournalJournal of Applied Physics
Issue number1
Publication statusPublished - 2003 Jan 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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