Abstract
The dynamic behavior of dislocations in heavily germanium (Ge)-doped, and Ge and boron (B) codoped silicon (Si) crystals was investigated using etch pit technique. Strong suppression of the generation of dislocations was found for Ge and B codoped Si in comparison with that observed for Ge-doped and B-doped Si. It was found that the velocity of dislocations in Ge and B codoped Si crystals was lower than that of dislocations in B-doped, Ge-doped, and undoped Si.
| Original language | English |
|---|---|
| Pages (from-to) | 265-269 |
| Number of pages | 5 |
| Journal | Journal of Applied Physics |
| Volume | 93 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2003 Jan 1 |
ASJC Scopus subject areas
- Physics and Astronomy(all)