Dynamic characteristics of dislocations in Ge-doped and (Ge+B) codoped silicon

I. Yonenaga; T. Taishi; X. Huang; K. Hoshikawa

doi:10.1063/1.1527970

Dynamic characteristics of dislocations in Ge-doped and (Ge+B) codoped silicon

I. Yonenaga, T. Taishi, X. Huang, K. Hoshikawa

Materials Design Division

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

The dynamic behavior of dislocations in heavily germanium (Ge)-doped, and Ge and boron (B) codoped silicon (Si) crystals was investigated using etch pit technique. Strong suppression of the generation of dislocations was found for Ge and B codoped Si in comparison with that observed for Ge-doped and B-doped Si. It was found that the velocity of dislocations in Ge and B codoped Si crystals was lower than that of dislocations in B-doped, Ge-doped, and undoped Si.

Original language	English
Pages (from-to)	265-269
Number of pages	5
Journal	Journal of Applied Physics
Volume	93
Issue number	1
DOIs	https://doi.org/10.1063/1.1527970
Publication status	Published - 2003 Jan 1

ASJC Scopus subject areas

Physics and Astronomy(all)

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AB - The dynamic behavior of dislocations in heavily germanium (Ge)-doped, and Ge and boron (B) codoped silicon (Si) crystals was investigated using etch pit technique. Strong suppression of the generation of dislocations was found for Ge and B codoped Si in comparison with that observed for Ge-doped and B-doped Si. It was found that the velocity of dislocations in Ge and B codoped Si crystals was lower than that of dislocations in B-doped, Ge-doped, and undoped Si.

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Dynamic characteristics of dislocations in Ge-doped and (Ge+B) codoped silicon

Abstract

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