The dynamic behavior of a and β dislocations in both undoped and impurity-doped InAs crystals is investigated as a function of stress and temperature by means of the etch pit technique. Suppression of the generation of dislocations from a surface scratch is found in S doped InAs, which is interpreted in terms of dislocation locking due to impurity clusters and/or impurity-defect complexes as has been observed in other III-V compounds, a dislocations move faster than β dislocations in the undoped and impurity-doped InAs. S donors reduce the velocities of both α and β dislocations. On the other hand, Zn acceptors enhance the velocity of α dislocations and reduce the velocity of β dislocations. Such features are related to an electronic state of the dislocations in the elementary process of the motion. The measured velocities are expressed using a simple empirical equation as a function of stress and temperature in the same manner as for other semiconductors. The linear dependence of the activation energies for dislocation motion on the band gap energy shows a clear distinction dependent on the group of semiconductors, i.e., the elemental and IV-IV compound, III-V compound, and II-VI compound.
ASJC Scopus subject areas
- Physics and Astronomy(all)