Ductile regime nanpmachining of single-crystal silicon carbide

John Patten, Wei Gao, Kudo Yasuto

Research output: Contribution to journalArticlepeer-review

147 Citations (Scopus)


We have demonstrated the ability to perform a ductile material removal operation, via single-point diamond turning, on single-crystal silicon carbide (6H). To our knowledge, this is the first reported work on the ductile machining of single-crystal silicon carbide (SiC). SiC experiences a ductile-to-brittle transition similar to other nominally brittle materials such as silicon, germanium, and silicon nitride. It is believed that the ductility of SiC during machining is due to the formation of a high-pressure phase at the cutting edge, which encompasses the chip formation zone and its associated material volume. This high-pressure phase transformation mechanism is similar to that found with other semiconductors and ceramics, leading to a plastic response rather than brittle fracture at small size scales.

Original languageEnglish
Pages (from-to)522-532
Number of pages11
JournalJournal of Manufacturing Science and Engineering, Transactions of the ASME
Issue number3
Publication statusPublished - 2005 Aug


  • Crystal Orientation
  • Cutting Forces
  • Ductile-to-Brittle Transition
  • Nanomachining
  • SEM/TEM Analysis
  • Single-Point Diamond Turning
  • Surface Finish

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Mechanical Engineering
  • Computer Science Applications
  • Industrial and Manufacturing Engineering


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