Dual work function phase controlled Ni-FUSI CMOS (NiSi NMOS, Ni 2Si or Ni31Si12 PMOS): Manufacturability, reliability & process window improvement by sacrificial SiGe cap

A. Veloso, T. Hoffmann, A. Lauwers, S. Brus, J. F. De Marneffe, S. Locorotondo, C. Vrancken, T. Kauerauf, A. Shickova, B. Sijmus, H. Tigelaar, M. A. Pawlak, H. Y. Yu, C. Demeurisse, S. Kubicek, C. Kerner, T. Chiarella, O. Richard, H. Bender, Masaaki NiwaP. Absil, M. Jurczak, S. Biesemans, J. A. Kittl

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

This work presents the first comprehensive evaluation of the manufacturability and reliability of dual WF phase controlled Ni-FUSI/HfSiON CMOS (NMOS: NiSi; PMOS: Ni2Si and Ni31Si12 evaluated) for the 45 nm node. RTP and poly/spacer height were identified as the most critical process control parameters in our flow. We demonstrate that a novel sacrificial SiGe cap addition to the flow (improved poly-Si/spacer height control) opens the RTP1 process window from ∼5°C to ∼20°C for gate lengths down to 45nm, making scalable dual WF CMOS Ni-FUSI manufacturaba. We demonstrate Vt control with σ∼19mV (including wafer to wafer variation, N=1000, 45 nm devices) for NMOS (NiSi), and σ∼21mV for PMOS. TDDB and NBTI reliability evaluation of NiSi and, for the first time, of Ni2Si and Ni31Si12 was done. ∼1V or larger operating voltages (Vop) were extrapolated for a 10 years lifetime. Using a higher backend thermal budget showed no reliability degradation.

Original languageEnglish
Title of host publication2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers
Pages94-95
Number of pages2
Publication statusPublished - 2006 Dec 1
Externally publishedYes
Event2006 Symposium on VLSI Technology, VLSIT - Honolulu, HI, United States
Duration: 2006 Jun 132006 Jun 15

Other

Other2006 Symposium on VLSI Technology, VLSIT
CountryUnited States
CityHonolulu, HI
Period06/6/1306/6/15

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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