Dual metal gate FinFET integration by Ta/Mo diffusion technology for Vt reduction and multi-Vt CMOS application

Takashi Matsukawa, Kazuhiko Endo, Yongxun Liu, Shinichi O'uchi, Yuki Ishikawa, Hiromi Yamauchi, Junichi Tsukada, Kenichi Ishii, Kunihiro Sakamoto, Eiichi Suzuki, Meishoku Masahara

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


Dual metal gate CMOS FinFETs have been integrated successfully by the Ta/Mo interdiffusion technology. For the first time, low-Vt CMOS FinFETs representing on-current enhancement and high-Vt CMOS FinFETs reducing stand-by power dramatically, namely multi-Vt CMOS FinFETs, are demonstrated by selecting Ta/Mo gates for n or pMOS FinFETs with non-doped fin channels. The dual metal gate FinFET SRAM with a low-Vt configuration is demonstrated with excellent noise margins at a reduced supply voltage.

Original languageEnglish
Pages (from-to)701-705
Number of pages5
JournalSolid-State Electronics
Issue number7
Publication statusPublished - 2009 Jul 1
Externally publishedYes


  • Dual metal gate
  • FinFET
  • Interdiffusion
  • Molybdenum (Mo)
  • Tantalum (Ta)
  • Work function

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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