Dual-Gate Modulation of Carrier Density and Disorder in an Oxide Two-Dimensional Electron System

Zhuoyu Chen, Hongtao Yuan, Yanwu Xie, Di Lu, Hisashi Inoue, Yasuyuki Hikita, Christopher Bell, Harold Y. Hwang

Research output: Contribution to journalArticlepeer-review

39 Citations (Scopus)


Carrier density and disorder are two crucial parameters that control the properties of correlated two-dimensional electron systems. In order to disentangle their individual contributions to quantum phenomena, independent tuning of these two parameters is required. Here, by utilizing a hybrid liquid/solid electric dual-gate geometry acting on the conducting LaAlO3/SrTiO3 heterointerface, we obtain an additional degree of freedom to strongly modify the electron confinement profile and thus the strength of interfacial scattering, independent from the carrier density. A dual-gate controlled nonlinear Hall effect is a direct manifestation of this profile, which can be quantitatively understood by a Poisson-Schrödinger sub-band model. In particular, the large nonlinear dielectric response of SrTiO3 enables a very wide range of tunable density and disorder, far beyond that for conventional semiconductors. Our study provides a broad framework for understanding various reported phenomena at the LaAlO3/SrTiO3 interface.

Original languageEnglish
Pages (from-to)6130-6136
Number of pages7
JournalNano Letters
Issue number10
Publication statusPublished - 2016 Oct 12
Externally publishedYes


  • SrTiO dielectric constant
  • disorder
  • ionic liquid gating
  • nonlinear Hall effect
  • oxide interface
  • quantum confinement

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering


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