Dual-gate AlGaN/GaN high-electron-mobility transistors with short gate length for high-power mixers

K. Shiojima, T. Makimura, T. Maruyama, T. Kosugi, T. Suemitsu, N. Shigekawa, M. Hiroki, H. Yokoyama

Research output: Contribution to journalConference articlepeer-review

Abstract

We have fabricated dual-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) with a short gate on SiC substrates for use in high-power mixers and have measured the DC and up-conversion RF characteristics. A device with a T-shaped gate (0.15 um × 300 μm) exhibits a maximum transconductance of 40 mS, an on-state breakdown voltage of over 30 V, and off-state breakdown voltage of 86 V. The maximum RF output power (PRFout) is 17 dBm, and the up-conversion gain is 7.5 dB at a frequency of 10 GHz when the bias point voltage is 30 V. As the local frequency increases from 2 to 10 GHz, P RFout and the gain decrease by only 2 and 2.6 dB, respectively. Shortening the gate was found to be effective in improving the frequency characteristics of a mixer at frequencies up to and including the X-band.

Original languageEnglish
Pages (from-to)469-472
Number of pages4
JournalPhysica Status Solidi C: Conferences
Volume3
Issue number3
DOIs
Publication statusPublished - 2006 May 8
Externally publishedYes
Event32nd International Symposium on Compound Semiconductors, ISCS-2005 - Rust, Germany
Duration: 2005 Sep 182005 Sep 22

ASJC Scopus subject areas

  • Condensed Matter Physics

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