Abstract
A 2GHz-band SiGe HBT low noise amplifier (LNA) achieving high saturation power and low distortion performance is described. It has a novel diode/resistor dual bias feed circuit for the base of the HBT to extend its P1dB. In small signal region, the conventional resistor feed circuit is a dominant base current source, but in large signal region, the diode turns on and the diode feed circuit can supply base current like a voltage source which allows higher output power and linearity. The fabricated dual feed type LNA shows the P1dB improvement of 5dB compared with the conventional resistor feed LNA.
| Original language | English |
|---|---|
| Pages (from-to) | 285-288 |
| Number of pages | 4 |
| Journal | IEEE MTT-S International Microwave Symposium Digest |
| Volume | 3 |
| Publication status | Published - 2001 Dec 1 |
| Externally published | Yes |
| Event | International Microwave Symposium Digest IEEE-MTT-S 2001 - Phoenix, AZ, United States Duration: 2001 May 20 → 2001 May 25 |
ASJC Scopus subject areas
- Radiation
- Condensed Matter Physics
- Electrical and Electronic Engineering