Abstract
A 2GHz-band SiGe HBT low noise amplifier (LNA) achieving high saturation power and low distortion performance is described. It has a novel diode/resistor dual bias feed circuit for the base of the HBT to extend its P1dB. In small signal region, the conventional resistor feed circuit is a dominant base current source, but in large signal region, the diode turns on and the diode feed circuit can supply base current like a voltage source which allows higher output power and linearity. The fabricated dual feed type LNA shows the P1dB improvement of 5dB compared with the conventional resistor feed LNA.
| Original language | English |
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| Pages | 227-230 |
| Number of pages | 4 |
| Publication status | Published - 2001 Jan 1 |
| Externally published | Yes |
| Event | 2001 IEEE Radio Frequency Integrated Circuits (RFIC) - Phoenix, AZ, United States Duration: 2001 May 20 → 2001 May 22 |
Other
| Other | 2001 IEEE Radio Frequency Integrated Circuits (RFIC) |
|---|---|
| Country/Territory | United States |
| City | Phoenix, AZ |
| Period | 01/5/20 → 01/5/22 |
ASJC Scopus subject areas
- Engineering(all)