A 2GHz-band SiGe HBT low noise amplifier (LNA) achieving high saturation power and low distortion performance is described. It has a novel diode/resistor dual bias feed circuit for the base of the HBT to extend its P1dB. In small signal region, the conventional resistor feed circuit is a dominant base current source, but in large signal region, the diode turns on and the diode feed circuit can supply base current like a voltage source which allows higher output power and linearity. The fabricated dual feed type LNA shows the P1dB improvement of 5dB compared with the conventional resistor feed LNA.
|Number of pages||4|
|Publication status||Published - 2001 Jan 1|
|Event||2001 IEEE Radio Frequency Integrated Circuits (RFIC) - Phoenix, AZ, United States|
Duration: 2001 May 20 → 2001 May 22
|Other||2001 IEEE Radio Frequency Integrated Circuits (RFIC)|
|Period||01/5/20 → 01/5/22|
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