DRY ETCH RESISTANCE OF METAL-FREE AND HALOGEN-SUBSTITUTED RESIST MATERIALS.

Hiroshi Gokan, Katsumi Tanigaki, Yoshitake Ohnishi

Research output: Contribution to specialist publicationArticle

15 Citations (Scopus)

Abstract

Etch resistance of metal-free and halogen-substituted resist materials has been investigated under ion-beam etching (IBE) and oxygen reactive ion etching (RIE) conditions. Etch rate enhancement observed for halogen-substituted polymers is explained by the increase in the average molecular weight divided by the density of the polymer, M** OVER BAR /// rho . These results reveal that the rate determining step under ion bombardment is the sputtering of carbon atoms which are not bonded to oxygen atoms. Under O//2-RIE conditions, etch characteristics strongly depend on etching parameters. Etch rate cannot be explained simply by the sputtering of carbon atoms. Under anisotropic etching conditions, etch rate enhancement in halogenaten polystyrenes is qualitatively explained by the increase in M** OVER BAR /// rho . Under isotropic etching conditions, a drastic etch rate reduction was observed for iodinated polystyrene.

Original languageEnglish
Pages163-167
Number of pages5
Volume28
No.5
Specialist publicationSolid State Technology
Publication statusPublished - 1985 May 1
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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