TY - JOUR
T1 - Dry development of resists exposed to focused gallium ion beam
AU - Kuwano, Hiroki
AU - Yoshida, Kazue
AU - Yamazaki, Shin Ichi
PY - 1980/10
Y1 - 1980/10
N2 - This report proposes a new lithography method employing focused ion beam exposure and subsequent dry development. It is shown that the plasma etching rate of resists exposed to gallium ions is much lower than that of resists not exposed. As this characteristic is applied to resist lithography, fine patterns can be obtained successfully. This dry development is applicable to many kinds of resist, such as PMMA, CMS, PGMA, FBM etc.
AB - This report proposes a new lithography method employing focused ion beam exposure and subsequent dry development. It is shown that the plasma etching rate of resists exposed to gallium ions is much lower than that of resists not exposed. As this characteristic is applied to resist lithography, fine patterns can be obtained successfully. This dry development is applicable to many kinds of resist, such as PMMA, CMS, PGMA, FBM etc.
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U2 - 10.1143/JJAP.19.L615
DO - 10.1143/JJAP.19.L615
M3 - Article
AN - SCOPUS:84875456919
VL - 19
SP - L615-L617
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 10
ER -