Dry development of resists exposed to focused gallium ion beam

Hiroki Kuwano; Kazue Yoshida; Shin Ichi Yamazaki

doi:10.1143/JJAP.19.L615

Dry development of resists exposed to focused gallium ion beam

Hiroki Kuwano, Kazue Yoshida, Shin Ichi Yamazaki

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

This report proposes a new lithography method employing focused ion beam exposure and subsequent dry development. It is shown that the plasma etching rate of resists exposed to gallium ions is much lower than that of resists not exposed. As this characteristic is applied to resist lithography, fine patterns can be obtained successfully. This dry development is applicable to many kinds of resist, such as PMMA, CMS, PGMA, FBM etc.

Original language	English
Pages (from-to)	L615-L617
Journal	Japanese journal of applied physics
Volume	19
Issue number	10
DOIs	https://doi.org/10.1143/JJAP.19.L615
Publication status	Published - 1980 Oct
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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abstract = "This report proposes a new lithography method employing focused ion beam exposure and subsequent dry development. It is shown that the plasma etching rate of resists exposed to gallium ions is much lower than that of resists not exposed. As this characteristic is applied to resist lithography, fine patterns can be obtained successfully. This dry development is applicable to many kinds of resist, such as PMMA, CMS, PGMA, FBM etc.",

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