This report proposes a new lithography method employing focused ion beam exposure and subsequent dry development. It is shown that the plasma etching rate of resists exposed to gallium ions is much lower than that of resists not exposed. As this characteristic is applied to resist lithography, fine patterns can be obtained successfully. This dry development is applicable to many kinds of resist, such as PMMA, CMS, PGMA, FBM etc.
ASJC Scopus subject areas
- Physics and Astronomy(all)