Dry development of resists exposed to focused gallium ion beam

Hiroki Kuwano, Kazue Yoshida, Shin Ichi Yamazaki

Research output: Contribution to journalArticlepeer-review

34 Citations (Scopus)

Abstract

This report proposes a new lithography method employing focused ion beam exposure and subsequent dry development. It is shown that the plasma etching rate of resists exposed to gallium ions is much lower than that of resists not exposed. As this characteristic is applied to resist lithography, fine patterns can be obtained successfully. This dry development is applicable to many kinds of resist, such as PMMA, CMS, PGMA, FBM etc.

Original languageEnglish
Pages (from-to)L615-L617
JournalJapanese journal of applied physics
Volume19
Issue number10
DOIs
Publication statusPublished - 1980 Oct
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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