TY - JOUR
T1 - Dry Cleaning of Si Surface Contamination by Reactive Sputter Etching
AU - Kuwano, Hiroki
AU - Miyake, Shojiro
AU - Kasai, Toshio
PY - 1982/3
Y1 - 1982/3
N2 - A dry cleaning method is needed at present in Si wafer processing. We investigated the removal of Na contamination from an Si surface by a reactive sputter etching method. The surface contamination was analyzed by SIMS, AES and ESCA, and the results showed that this dry cleaning technique can decrease Na contamination under low gas pressure and high RF power if a CF4+O2 gas mixture is used. However, a saturated Na contamination value exists because of reattachment of Na atoms sputtered from the surface of the sample, the cathode and the chamber walls. Fluorine plays an important role in removing the Na. Na atoms combine with F atoms, and are then sputtered from the surface in this cleaning method. F and C atoms are removed from the surface as COx and COFx as the relative flow rate (O2/CF4) increases.
AB - A dry cleaning method is needed at present in Si wafer processing. We investigated the removal of Na contamination from an Si surface by a reactive sputter etching method. The surface contamination was analyzed by SIMS, AES and ESCA, and the results showed that this dry cleaning technique can decrease Na contamination under low gas pressure and high RF power if a CF4+O2 gas mixture is used. However, a saturated Na contamination value exists because of reattachment of Na atoms sputtered from the surface of the sample, the cathode and the chamber walls. Fluorine plays an important role in removing the Na. Na atoms combine with F atoms, and are then sputtered from the surface in this cleaning method. F and C atoms are removed from the surface as COx and COFx as the relative flow rate (O2/CF4) increases.
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U2 - 10.1143/JJAP.21.529
DO - 10.1143/JJAP.21.529
M3 - Article
AN - SCOPUS:0020099740
VL - 21
SP - 529
EP - 533
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 3
ER -