Dry Cleaning of Si Surface Contamination by Reactive Sputter Etching

Hiroki Kuwano, Shojiro Miyake, Toshio Kasai

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


A dry cleaning method is needed at present in Si wafer processing. We investigated the removal of Na contamination from an Si surface by a reactive sputter etching method. The surface contamination was analyzed by SIMS, AES and ESCA, and the results showed that this dry cleaning technique can decrease Na contamination under low gas pressure and high RF power if a CF4+O2 gas mixture is used. However, a saturated Na contamination value exists because of reattachment of Na atoms sputtered from the surface of the sample, the cathode and the chamber walls. Fluorine plays an important role in removing the Na. Na atoms combine with F atoms, and are then sputtered from the surface in this cleaning method. F and C atoms are removed from the surface as COx and COFx as the relative flow rate (O2/CF4) increases.

Original languageEnglish
Pages (from-to)529-533
Number of pages5
JournalJapanese journal of applied physics
Issue number3
Publication statusPublished - 1982 Mar
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


Dive into the research topics of 'Dry Cleaning of Si Surface Contamination by Reactive Sputter Etching'. Together they form a unique fingerprint.

Cite this