Drastically Reduced Dark Current by Pulse-Time-Modulated Plasma for Precise Micro Lens Fabrication in Highly Sensitive CCD Image Sensor

Yasushi Ishikawa, Mitsuru Okigawa, Yoshinari Ichihashi, Seiji Samukawa

Research output: Contribution to journalConference article

Abstract

Highly sensitive charge coupled device image sensors (CCD) have some serious problems such as increased dark current and interface states induced by the plasma etching processes. Especially, the UV photons (200nm to 300nm) irradiation generates this damage. To solve this problem we investigated optimum fluorocarbon gas chemistries and the effect of pulse-time-modulated (TM) plasma. We found that the dark current in CCDs was drastically reduced by selecting gas chemistries and using TM plasma.

Original languageEnglish
Pages (from-to)393-396
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 2003 Dec 1
EventIEEE International Electron Devices Meeting - Washington, DC, United States
Duration: 2003 Dec 82003 Dec 10

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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