@inproceedings{88d4d8825ca64df386dce6114a7d26ec,
title = "Drastically improved NBTI lifetime by periodic plasma nitridation for 90 nm mobile applications at low voltage operation",
abstract = "The controlling concentration and location of nitrogen in SiON film by using TM plasma, and the improvement in the NBTI lifetime due to shallow nitrogen profile of fabricated specimen were reported.",
keywords = "Apertures, FETs, Low voltage, Niobium compounds, Nitrogen, Plasma applications, Plasma materials processing, Plasma measurements, Semiconductor films, Titanium compounds",
author = "T. Kawae and Y. Minemura and S. Fukuda and T. Hirano and Y. Suzuki and M. Saito and S. Kadomura and S. Samukawa",
year = "2003",
month = jan,
day = "1",
doi = "10.1109/IWGI.2003.159202",
language = "English",
series = "Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "146--149",
booktitle = "Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003",
note = "International Workshop on Gate Insulator, IWGI 2003 ; Conference date: 06-11-2003 Through 07-11-2003",
}