Drastically improved NBTI lifetime by periodic plasma nitridation for 90 nm mobile applications at low voltage operation

T. Kawae, Y. Minemura, S. Fukuda, T. Hirano, Y. Suzuki, M. Saito, S. Kadomura, S. Samukawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The controlling concentration and location of nitrogen in SiON film by using TM plasma, and the improvement in the NBTI lifetime due to shallow nitrogen profile of fabricated specimen were reported.

Original languageEnglish
Title of host publicationExtended Abstracts of International Workshop on Gate Insulator, IWGI 2003
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages146-149
Number of pages4
ISBN (Electronic)4891140372, 9784891140373
DOIs
Publication statusPublished - 2003 Jan 1
EventInternational Workshop on Gate Insulator, IWGI 2003 - Tokyo, Japan
Duration: 2003 Nov 62003 Nov 7

Publication series

NameExtended Abstracts of International Workshop on Gate Insulator, IWGI 2003

Other

OtherInternational Workshop on Gate Insulator, IWGI 2003
CountryJapan
CityTokyo
Period03/11/603/11/7

Keywords

  • Apertures
  • FETs
  • Low voltage
  • Niobium compounds
  • Nitrogen
  • Plasma applications
  • Plasma materials processing
  • Plasma measurements
  • Semiconductor films
  • Titanium compounds

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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