Drastically improved NBTI lifetime by periodic plasma nitridation for 90 nm mobile applications at low voltage operation

T. Kawae; Y. Minemura; S. Fukuda; T. Hirano; Y. Suzuki; M. Saito; S. Kadomura; S. Samukawa

doi:10.1109/IWGI.2003.159202

Drastically improved NBTI lifetime by periodic plasma nitridation for 90 nm mobile applications at low voltage operation

T. Kawae, Y. Minemura, S. Fukuda, T. Hirano, Y. Suzuki, M. Saito, S. Kadomura, S. Samukawa

Innovative Energy Research Center

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

The controlling concentration and location of nitrogen in SiON film by using TM plasma, and the improvement in the NBTI lifetime due to shallow nitrogen profile of fabricated specimen were reported.

Original language	English
Title of host publication	Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	146-149
Number of pages	4
ISBN (Electronic)	4891140372, 9784891140373
DOIs	https://doi.org/10.1109/IWGI.2003.159202
Publication status	Published - 2003 Jan 1
Event	International Workshop on Gate Insulator, IWGI 2003 - Tokyo, Japan Duration: 2003 Nov 6 → 2003 Nov 7

Publication series

Name	Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003

Other

Other	International Workshop on Gate Insulator, IWGI 2003
Country	Japan
City	Tokyo
Period	03/11/6 → 03/11/7

Keywords

Apertures
FETs
Low voltage
Niobium compounds
Nitrogen
Plasma applications
Plasma materials processing
Plasma measurements
Semiconductor films
Titanium compounds

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/IWGI.2003.159202

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Kawae, T., Minemura, Y., Fukuda, S., Hirano, T., Suzuki, Y., Saito, M., Kadomura, S., & Samukawa, S. (2003). Drastically improved NBTI lifetime by periodic plasma nitridation for 90 nm mobile applications at low voltage operation. In Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003 (pp. 146-149). [1252527] (Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IWGI.2003.159202

Drastically improved NBTI lifetime by periodic plasma nitridation for 90 nm mobile applications at low voltage operation. / Kawae, T.; Minemura, Y.; Fukuda, S.; Hirano, T.; Suzuki, Y.; Saito, M.; Kadomura, S.; Samukawa, S.

Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003. Institute of Electrical and Electronics Engineers Inc., 2003. p. 146-149 1252527 (Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kawae, T, Minemura, Y, Fukuda, S, Hirano, T, Suzuki, Y, Saito, M, Kadomura, S & Samukawa, S 2003, Drastically improved NBTI lifetime by periodic plasma nitridation for 90 nm mobile applications at low voltage operation. in Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003., 1252527, Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003, Institute of Electrical and Electronics Engineers Inc., pp. 146-149, International Workshop on Gate Insulator, IWGI 2003, Tokyo, Japan, 03/11/6. https://doi.org/10.1109/IWGI.2003.159202

Kawae T, Minemura Y, Fukuda S, Hirano T, Suzuki Y, Saito M et al. Drastically improved NBTI lifetime by periodic plasma nitridation for 90 nm mobile applications at low voltage operation. In Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003. Institute of Electrical and Electronics Engineers Inc. 2003. p. 146-149. 1252527. (Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003). https://doi.org/10.1109/IWGI.2003.159202

Kawae, T. ; Minemura, Y. ; Fukuda, S. ; Hirano, T. ; Suzuki, Y. ; Saito, M. ; Kadomura, S. ; Samukawa, S. / Drastically improved NBTI lifetime by periodic plasma nitridation for 90 nm mobile applications at low voltage operation. Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003. Institute of Electrical and Electronics Engineers Inc., 2003. pp. 146-149 (Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003).

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abstract = "The controlling concentration and location of nitrogen in SiON film by using TM plasma, and the improvement in the NBTI lifetime due to shallow nitrogen profile of fabricated specimen were reported.",

keywords = "Apertures, FETs, Low voltage, Niobium compounds, Nitrogen, Plasma applications, Plasma materials processing, Plasma measurements, Semiconductor films, Titanium compounds",

author = "T. Kawae and Y. Minemura and S. Fukuda and T. Hirano and Y. Suzuki and M. Saito and S. Kadomura and S. Samukawa",

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AU - Suzuki, Y.

AU - Saito, M.

AU - Kadomura, S.

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KW - FETs

KW - Low voltage

KW - Niobium compounds

KW - Nitrogen

KW - Plasma applications

KW - Plasma materials processing

KW - Plasma measurements

KW - Semiconductor films

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BT - Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003

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Drastically improved NBTI lifetime by periodic plasma nitridation for 90 nm mobile applications at low voltage operation

Abstract

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Keywords

ASJC Scopus subject areas

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