Drastic suppression of the 1/f noise in MOSFETs: Fundamental fluctuations of mobility rather than induced mobility fluctuations

Philippe Gaubert, Akinobu Teramoto, Shigetoshi Sugawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A significant reduction of the 1/f noise level has been achieved by the means of a new Metal-Oxide-Semiconductor (MOS) structure and new fabrication processes, opening new horizons for future Very large Scale Integration (VLSI) technology. Furthermore, on account of these investigations, the study of the 1/f noise has been made possible at high drain current. While we might have thought that the 1/f noise could be explained in term of oxide charge and induced mobility fluctuations, the study within this specific operating range revealed the ineffectiveness of the induced mobility fluctuations to accurately model the noise. Instead, better modeling has been achieved through the use of the fundamental fluctuations of mobility of the Hooge theory testifying in favor of the oxide charge and fundamental fluctuations of mobility to explain the 1/f noise in our MOSFETs.

Original languageEnglish
Title of host publication2015 International Conference on Noise and Fluctuations, ICNF 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781467383356
DOIs
Publication statusPublished - 2015 Oct 2
EventInternational Conference on Noise and Fluctuations, ICNF 2015 - Xian, China
Duration: 2015 Jun 22015 Jun 6

Publication series

Name2015 International Conference on Noise and Fluctuations, ICNF 2015

Other

OtherInternational Conference on Noise and Fluctuations, ICNF 2015
CountryChina
CityXian
Period15/6/215/6/6

Keywords

  • Accumulation Mode
  • Hooge Theory
  • Induced Mobility Fluctuations
  • Low Frequency Noise
  • Metal-Oxide-Semiconductor
  • Oxide Charge Fluctuations
  • Plasma Process
  • Salicide
  • Silicon

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Acoustics and Ultrasonics

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