Drastic reduction of dislocation density in semipolar (1122) GaN stripe crystal on Si substrate by dual selective metal-organic vapor phase epitaxy

Tasuku Murase, Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano, Nobuhiko Sawaki

Research output: Contribution to journalArticle

9 Citations (Scopus)

Fingerprint Dive into the research topics of 'Drastic reduction of dislocation density in semipolar (1122) GaN stripe crystal on Si substrate by dual selective metal-organic vapor phase epitaxy'. Together they form a unique fingerprint.

Engineering & Materials Science

Physics & Astronomy