Drastic reduction of dislocation density in semipolar (1122) GaN stripe crystal on Si substrate by dual selective metal-organic vapor phase epitaxy

Tasuku Murase; Tomoyuki Tanikawa; Yoshio Honda; Masahito Yamaguchi; Hiroshi Amano; Nobuhiko Sawaki

doi:10.1143/JJAP.50.01AD04

Drastic reduction of dislocation density in semipolar (1122) GaN stripe crystal on Si substrate by dual selective metal-organic vapor phase epitaxy

Tasuku Murase, Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano, Nobuhiko Sawaki

Materials Design Division

Research output: Contribution to journal › Article

9 Citations (Scopus)

Abstract

A drastic reduction of the dislocation density in a semipolar (1122) GaN stripe on a patterned Si substrate was achieved by the two-step selective growth of a GaN stripe. After depositing a SiO₂ mask on the (1122) and (0001) faces of a GaN stripe grown on a (113) Si substrate, GaN was regrown only on the (1122) face. The dislocation density estimated from the dark-spot density in a cathodoluminescence (CL) image greatly decreased from 4.0 × 10⁸ to 1.0 × 10⁵/cm² in the regrowth region. A transmission electron microscopy (TEM) image also verified that there were no dislocations at the regrowth interfaces.

Original language	English
Article number	01AD04
Journal	Japanese journal of applied physics
Volume	50
Issue number	1 PART 2
DOIs	https://doi.org/10.1143/JJAP.50.01AD04
Publication status	Published - 2011 Jan 1

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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Murase, T., Tanikawa, T., Honda, Y., Yamaguchi, M., Amano, H., & Sawaki, N. (2011). Drastic reduction of dislocation density in semipolar (1122) GaN stripe crystal on Si substrate by dual selective metal-organic vapor phase epitaxy. Japanese journal of applied physics, 50(1 PART 2), [01AD04]. https://doi.org/10.1143/JJAP.50.01AD04

Drastic reduction of dislocation density in semipolar (1122) GaN stripe crystal on Si substrate by dual selective metal-organic vapor phase epitaxy. / Murase, Tasuku; Tanikawa, Tomoyuki; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi; Sawaki, Nobuhiko.

In: Japanese journal of applied physics, Vol. 50, No. 1 PART 2, 01AD04, 01.01.2011.

Research output: Contribution to journal › Article

@article{1f09314d96634d1fb722c79f1bdc066c,

title = "Drastic reduction of dislocation density in semipolar (1122) GaN stripe crystal on Si substrate by dual selective metal-organic vapor phase epitaxy",

abstract = "A drastic reduction of the dislocation density in a semipolar (1122) GaN stripe on a patterned Si substrate was achieved by the two-step selective growth of a GaN stripe. After depositing a SiO2 mask on the (1122) and (0001) faces of a GaN stripe grown on a (113) Si substrate, GaN was regrown only on the (1122) face. The dislocation density estimated from the dark-spot density in a cathodoluminescence (CL) image greatly decreased from 4.0 × 108 to 1.0 × 105/cm2 in the regrowth region. A transmission electron microscopy (TEM) image also verified that there were no dislocations at the regrowth interfaces.",

author = "Tasuku Murase and Tomoyuki Tanikawa and Yoshio Honda and Masahito Yamaguchi and Hiroshi Amano and Nobuhiko Sawaki",

year = "2011",

month = jan,

day = "1",

doi = "10.1143/JJAP.50.01AD04",

language = "English",

volume = "50",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "1 PART 2",

}

TY - JOUR

T1 - Drastic reduction of dislocation density in semipolar (1122) GaN stripe crystal on Si substrate by dual selective metal-organic vapor phase epitaxy

AU - Murase, Tasuku

AU - Tanikawa, Tomoyuki

AU - Honda, Yoshio

AU - Yamaguchi, Masahito

AU - Amano, Hiroshi

AU - Sawaki, Nobuhiko

PY - 2011/1/1

Y1 - 2011/1/1

N2 - A drastic reduction of the dislocation density in a semipolar (1122) GaN stripe on a patterned Si substrate was achieved by the two-step selective growth of a GaN stripe. After depositing a SiO2 mask on the (1122) and (0001) faces of a GaN stripe grown on a (113) Si substrate, GaN was regrown only on the (1122) face. The dislocation density estimated from the dark-spot density in a cathodoluminescence (CL) image greatly decreased from 4.0 × 108 to 1.0 × 105/cm2 in the regrowth region. A transmission electron microscopy (TEM) image also verified that there were no dislocations at the regrowth interfaces.

AB - A drastic reduction of the dislocation density in a semipolar (1122) GaN stripe on a patterned Si substrate was achieved by the two-step selective growth of a GaN stripe. After depositing a SiO2 mask on the (1122) and (0001) faces of a GaN stripe grown on a (113) Si substrate, GaN was regrown only on the (1122) face. The dislocation density estimated from the dark-spot density in a cathodoluminescence (CL) image greatly decreased from 4.0 × 108 to 1.0 × 105/cm2 in the regrowth region. A transmission electron microscopy (TEM) image also verified that there were no dislocations at the regrowth interfaces.

UR - http://www.scopus.com/inward/record.url?scp=79955150173&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79955150173&partnerID=8YFLogxK

U2 - 10.1143/JJAP.50.01AD04

DO - 10.1143/JJAP.50.01AD04

M3 - Article

AN - SCOPUS:79955150173

VL - 50

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 1 PART 2

M1 - 01AD04

ER -