TY - JOUR
T1 - Drastic reduction of dislocation density in semipolar (1122) GaN stripe crystal on Si substrate by dual selective metal-organic vapor phase epitaxy
AU - Murase, Tasuku
AU - Tanikawa, Tomoyuki
AU - Honda, Yoshio
AU - Yamaguchi, Masahito
AU - Amano, Hiroshi
AU - Sawaki, Nobuhiko
PY - 2011/1
Y1 - 2011/1
N2 - A drastic reduction of the dislocation density in a semipolar (1122) GaN stripe on a patterned Si substrate was achieved by the two-step selective growth of a GaN stripe. After depositing a SiO2 mask on the (1122) and (0001) faces of a GaN stripe grown on a (113) Si substrate, GaN was regrown only on the (1122) face. The dislocation density estimated from the dark-spot density in a cathodoluminescence (CL) image greatly decreased from 4.0 × 108 to 1.0 × 105/cm2 in the regrowth region. A transmission electron microscopy (TEM) image also verified that there were no dislocations at the regrowth interfaces.
AB - A drastic reduction of the dislocation density in a semipolar (1122) GaN stripe on a patterned Si substrate was achieved by the two-step selective growth of a GaN stripe. After depositing a SiO2 mask on the (1122) and (0001) faces of a GaN stripe grown on a (113) Si substrate, GaN was regrown only on the (1122) face. The dislocation density estimated from the dark-spot density in a cathodoluminescence (CL) image greatly decreased from 4.0 × 108 to 1.0 × 105/cm2 in the regrowth region. A transmission electron microscopy (TEM) image also verified that there were no dislocations at the regrowth interfaces.
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U2 - 10.1143/JJAP.50.01AD04
DO - 10.1143/JJAP.50.01AD04
M3 - Article
AN - SCOPUS:79955150173
VL - 50
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 1 PART 2
M1 - 01AD04
ER -