TY - JOUR
T1 - Drastic modification of the growth mode of Ge quantum dots on Si by using boron adlayer
AU - Takamiya, H.
AU - Miura, M.
AU - Usami, N.
AU - Hattori, T.
AU - Shiraki, Y.
N1 - Funding Information:
The authors would like to acknowledge K. Kawaguchi, T. Ueno and T. Irisawa for their expert support in MBE growth and discussions, and S. Otake for his technical support. This work was in part supported by a Grant-in-aid form the Ministry of Education, Science and Culture, Japan Society for the Promotion of Science (JSPS) International priority Collaboration Program, and the Core Research for Evolutional Science and Technology (CREST) of the Japan Science and Technology Corporation (JST).
PY - 2000/7/3
Y1 - 2000/7/3
N2 - The effects of introducing boron (B) on the growth of Ge islands are studied and quite small Ge islands were found to appear in the presence of B adlayer. On the other hand, cosupply of Ge and B brought no change in the island size and the decrement of the number of Ge islands. The average of lateral size and height of these small islands are 30 and 1.5 nm, respectively, and the density is 1.4×1010 cm-2 which is much higher than that of typical Ge islands. These results indicate that pre-deposition of B can produce preferable surface morphologies that small Ge islands can be easily formed.
AB - The effects of introducing boron (B) on the growth of Ge islands are studied and quite small Ge islands were found to appear in the presence of B adlayer. On the other hand, cosupply of Ge and B brought no change in the island size and the decrement of the number of Ge islands. The average of lateral size and height of these small islands are 30 and 1.5 nm, respectively, and the density is 1.4×1010 cm-2 which is much higher than that of typical Ge islands. These results indicate that pre-deposition of B can produce preferable surface morphologies that small Ge islands can be easily formed.
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U2 - 10.1016/S0040-6090(00)00840-3
DO - 10.1016/S0040-6090(00)00840-3
M3 - Conference article
AN - SCOPUS:0034229201
VL - 369
SP - 84
EP - 87
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 1
T2 - The International Joint Conference on Silicon Epitaxyand Heterostructures (IJC-SI)
Y2 - 12 September 1999 through 17 September 1999
ER -