Abstract
The effects of introducing boron (B) on the growth of Ge islands are studied and quite small Ge islands were found to appear in the presence of B adlayer. On the other hand, cosupply of Ge and B brought no change in the island size and the decrement of the number of Ge islands. The average of lateral size and height of these small islands are 30 and 1.5 nm, respectively, and the density is 1.4×1010 cm-2 which is much higher than that of typical Ge islands. These results indicate that pre-deposition of B can produce preferable surface morphologies that small Ge islands can be easily formed.
| Original language | English |
|---|---|
| Pages (from-to) | 84-87 |
| Number of pages | 4 |
| Journal | Thin Solid Films |
| Volume | 369 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2000 Jul 3 |
| Event | The International Joint Conference on Silicon Epitaxyand Heterostructures (IJC-SI) - Miyagi, Jpn Duration: 1999 Sep 12 → 1999 Sep 17 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
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Takamiya, H., Miura, M., Usami, N., Hattori, T., & Shiraki, Y. (2000). Drastic modification of the growth mode of Ge quantum dots on Si by using boron adlayer. Thin Solid Films, 369(1), 84-87. https://doi.org/10.1016/S0040-6090(00)00840-3