TY - JOUR
T1 - Drastic change of the Fermi surface across the metamagnetic transition in CeRh2Si2
AU - Götze, K.
AU - Aoki, D.
AU - Lévy-Bertrand, F.
AU - Harima, H.
AU - Sheikin, I.
N1 - Publisher Copyright:
© 2017 American Physical Society.
PY - 2017/4/12
Y1 - 2017/4/12
N2 - We report high field de Haas-van Alphen (dHvA) effect measurements in CeRh2Si2 both below and above the first-order 26 T metamagnetic transition from an antiferromagnetic to a polarized paramagnetic state. The dHvA frequencies observed above the transition are much higher than those observed below, implying a drastic change of the Fermi-surface size. The dHvA frequencies above the transition and their angular dependence are in good agreement with band-structure calculations for LaRh2Si2, which correspond to CeRh2Si2 with localized f electrons. Given that the f electrons are also localized at low fields in CeRh2Si2, the Fermi-surface reconstruction is due to the suppression of antiferromagnetism and the restoration of the crystallographic Brillouin zone rather than the delocalization of the f electrons. This example suggests that the intuitive notation of "small" and "large" Fermi surfaces commonly used for localized and itinerant f electrons, respectively, requires careful consideration, taking into account the modification of the Brillouin zone in the antiferromagnetic state, when interpreting experimental results.
AB - We report high field de Haas-van Alphen (dHvA) effect measurements in CeRh2Si2 both below and above the first-order 26 T metamagnetic transition from an antiferromagnetic to a polarized paramagnetic state. The dHvA frequencies observed above the transition are much higher than those observed below, implying a drastic change of the Fermi-surface size. The dHvA frequencies above the transition and their angular dependence are in good agreement with band-structure calculations for LaRh2Si2, which correspond to CeRh2Si2 with localized f electrons. Given that the f electrons are also localized at low fields in CeRh2Si2, the Fermi-surface reconstruction is due to the suppression of antiferromagnetism and the restoration of the crystallographic Brillouin zone rather than the delocalization of the f electrons. This example suggests that the intuitive notation of "small" and "large" Fermi surfaces commonly used for localized and itinerant f electrons, respectively, requires careful consideration, taking into account the modification of the Brillouin zone in the antiferromagnetic state, when interpreting experimental results.
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U2 - 10.1103/PhysRevB.95.161107
DO - 10.1103/PhysRevB.95.161107
M3 - Article
AN - SCOPUS:85017613080
VL - 95
JO - Physical Review B
JF - Physical Review B
SN - 2469-9950
IS - 16
M1 - 161107
ER -