Drastic change of the Fermi surface across the metamagnetic transition in CeRh2Si2

K. Götze, D. Aoki, F. Lévy-Bertrand, H. Harima, I. Sheikin

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

We report high field de Haas-van Alphen (dHvA) effect measurements in CeRh2Si2 both below and above the first-order 26 T metamagnetic transition from an antiferromagnetic to a polarized paramagnetic state. The dHvA frequencies observed above the transition are much higher than those observed below, implying a drastic change of the Fermi-surface size. The dHvA frequencies above the transition and their angular dependence are in good agreement with band-structure calculations for LaRh2Si2, which correspond to CeRh2Si2 with localized f electrons. Given that the f electrons are also localized at low fields in CeRh2Si2, the Fermi-surface reconstruction is due to the suppression of antiferromagnetism and the restoration of the crystallographic Brillouin zone rather than the delocalization of the f electrons. This example suggests that the intuitive notation of "small" and "large" Fermi surfaces commonly used for localized and itinerant f electrons, respectively, requires careful consideration, taking into account the modification of the Brillouin zone in the antiferromagnetic state, when interpreting experimental results.

Original languageEnglish
Article number161107
JournalPhysical Review B
Volume95
Issue number16
DOIs
Publication statusPublished - 2017 Apr 12

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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