Dramatic dependence of the Fermi level pinning strength on crystal orientation at clean surfaces of n-type In0.53Ga0.47As grown by molecular beam epitaxy

Simon Perraud, Kiyoshi Kanisawa, Zhao Zhong Wang, Yoshiro Hirayama

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The electronic density of states at clean surfaces of n-type In0.53Ga0.47As, grown by molecular beam epitaxy on lattice-matched (0 0 1)- and (1 1 1)A-oriented InP substrates, was measured by low-temperature scanning tunneling spectroscopy under ultra-high vacuum. It was found that the surface Fermi level (FL) pinning strength dramatically depends on crystal orientation. The FL at the (0 0 1)-(2×4) surface is pinned near midgap, independently of the dopant concentration in the bulk. In contrast, the FL at the (1 1 1)A-(2×2) surface lies in the conduction band, close to the bulk FL, and increases with dopant concentration.

Original languageEnglish
Pages (from-to)148-151
Number of pages4
JournalJournal of Crystal Growth
Volume301-302
Issue numberSPEC. ISS.
DOIs
Publication statusPublished - 2007 Apr 1

Keywords

  • A1. Surfaces
  • A3. Molecular beam epitaxy
  • B2. Semiconducting III-V materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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