Drain leakage current and instability of drain current in Si/Si1-xGex MOSFETs

Toshiaki Tsuchiya, Kinya Goto, Masao Sakuraba, Takashi Matsuura, Junichi Murota

Research output: Contribution to journalConference article

6 Citations (Scopus)

Abstract

Anomalous drain leakage current in Si1-xGex-channel pMOSFETs was analyzed by investigating the surface generation current in a gate-controlled p+-n junction, and determining how the leakage current is influenced by Si1-xGex thickness, Ge fraction, and temperature. It was concluded that the leakage current is related to interface traps generated at Si/SiO2 interface, and the current is due to trap-assisted band-to-band tunneling. The interface traps are generated in significantly numbers in MOSFETs with Si1-xGex layers thicker than the critical thickness of misfit-dislocation generation. The leakage current sets constraints for Si1-xGex thickness and/or Ge fraction in Si/Si1-xGex heterostructure MOSFETs. Moreover, instability of the drain current can be observed presumably due to a field effect derived from holes trapped and/or de-trapped in shallow states near Si/Si1-xGex interface.

Original languageEnglish
Pages (from-to)379-382
Number of pages4
JournalThin Solid Films
Volume369
Issue number1
DOIs
Publication statusPublished - 2000 Jul 3
EventThe International Joint Conference on Silicon Epitaxyand Heterostructures (IJC-SI) - Miyagi, Jpn
Duration: 1999 Sep 121999 Sep 17

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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