Drain current enhancement induced by hole injection from gate of 600-V-class normally off gate injection transistor under high temperature conditions up to 200°C

Hajime Ishii, Hiroaki Ueno, Tetsuzo Ueda, Tetsuo Endoh

Research output: Contribution to journalArticle

Abstract

In this paper, the current–voltage (I–V) characteristics of a 600-V-class normally off GaN gate injection transistor (GIT) from 25 to 200 °C are analyzed, and it is revealed that the drain current of the GIT increases during high-temperature operation. It is found that the maximum drain current (Idmax) of the GIT is 86% higher than that of a conventional 600-V-class normally off GaN metal insulator semiconductor hetero-FET (MIS-HFET) at 150 °C, whereas the GIT obtains 56% Idmax even at 200 °C. Moreover, the mechanism of the drain current increase of the GIT is clarified by examining the relationship between the temperature dependence of the I–V characteristics of the GIT and the gate hole injection effect determined from the shift of the second transconductance (gm) peak of the gm–Vg characteristic. From the above, the GIT is a promising device with enough drivability for future power switching applications even under high-temperature conditions.

Original languageEnglish
Article number06KC03
JournalJapanese journal of applied physics
Volume57
Issue number6
DOIs
Publication statusPublished - 2018 Jun

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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