Abstract
We report a high electronic-optical power conversion efficiency of 11.4% in the laser operation of a doublemesa-structure vertical-to-surface transmission electro-photonic device with a vertical cavity. This high conversion efficiency is due to both reduction in the device resistance and increase in light emission efficiency. To reduce electrical resistance, a double mesa structure with a highly doped region is proposed and the resistance reduction is analyzed. To increase light emission efficiency, efficient carrier confinement in the active region by a proton-implanted structure, threshold current reduction by photon recycling, and decreased light absorption by annealing after proton implantation are utilized. Electronic-optical conversion efficiency of over 10% is achieved in surface- emitting devices for the first time to the authors’ knowledge.
| Original language | English |
|---|---|
| Pages (from-to) | 604-608 |
| Number of pages | 5 |
| Journal | Japanese journal of applied physics |
| Volume | 32 |
| Issue number | 1 S |
| DOIs | |
| Publication status | Published - 1993 Jan |
| Externally published | Yes |
Keywords
- 2-D integration
- Electronic-optical power conversion efficiency
- Optical functional device
- Optical functional interconnection
- Proton implantation
- Surface-emitting laser
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)