Ga0.47In0.53As MESFETs have been fabricated on InP substrates. The low barrier height of Ga0.47In0.53As (0.20 eV) which makes simple GaInAs MESFETs at this composition impractical, has been over-come by using thin A10.48In0.52As layers between gate metal and GaInAs active layers. A10.481n0.52As has also been exploited in the form of buffer layers. The double heterostructure FET wafers with single crystal Al gate metal were grown by molecular beam epitaxy (MBE). The 2.75 µm gate length MESFETs showed d.c. transconductance gm = 57 mS mm-1 in spite of nonoptimized dimensions.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering