Double Heterostructure Ga0.47In0.53As MESFETs by MBE

Hideo Ohno; Joseph Barnard; Colin E.C. Wood; Lester F. Eastman

doi:10.1109/EDL.1980.25270

Double Heterostructure Ga0.47In0.53As MESFETs by MBE

Hideo Ohno, Joseph Barnard, Colin E.C. Wood, Lester F. Eastman

Research output: Contribution to journal › Article › peer-review

63 Citations (Scopus)

Abstract

Ga0.47In0.53As MESFETs have been fabricated on InP substrates. The low barrier height of Ga0.47In0.53As (0.20 eV) which makes simple GaInAs MESFETs at this composition impractical, has been over-come by using thin A10.48In0.52As layers between gate metal and GaInAs active layers. A10.481n0.52As has also been exploited in the form of buffer layers. The double heterostructure FET wafers with single crystal Al gate metal were grown by molecular beam epitaxy (MBE). The 2.75 µm gate length MESFETs showed d.c. transconductance gm = 57 mS mm-1 in spite of nonoptimized dimensions.

Original language	English
Pages (from-to)	154-155
Number of pages	2
Journal	IEEE Electron Device Letters
Volume	1
Issue number	8
DOIs	https://doi.org/10.1109/EDL.1980.25270
Publication status	Published - 1980 Aug
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/EDL.1980.25270

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abstract = "Ga0.47In0.53As MESFETs have been fabricated on InP substrates. The low barrier height of Ga0.47In0.53As (0.20 eV) which makes simple GaInAs MESFETs at this composition impractical, has been over-come by using thin A10.48In0.52As layers between gate metal and GaInAs active layers. A10.481n0.52As has also been exploited in the form of buffer layers. The double heterostructure FET wafers with single crystal Al gate metal were grown by molecular beam epitaxy (MBE). The 2.75 µm gate length MESFETs showed d.c. transconductance gm = 57 mS mm-1 in spite of nonoptimized dimensions.",

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AU - Ohno, Hideo

AU - Barnard, Joseph

AU - Wood, Colin E.C.

AU - Eastman, Lester F.

PY - 1980/8

Y1 - 1980/8

N2 - Ga0.47In0.53As MESFETs have been fabricated on InP substrates. The low barrier height of Ga0.47In0.53As (0.20 eV) which makes simple GaInAs MESFETs at this composition impractical, has been over-come by using thin A10.48In0.52As layers between gate metal and GaInAs active layers. A10.481n0.52As has also been exploited in the form of buffer layers. The double heterostructure FET wafers with single crystal Al gate metal were grown by molecular beam epitaxy (MBE). The 2.75 µm gate length MESFETs showed d.c. transconductance gm = 57 mS mm-1 in spite of nonoptimized dimensions.

AB - Ga0.47In0.53As MESFETs have been fabricated on InP substrates. The low barrier height of Ga0.47In0.53As (0.20 eV) which makes simple GaInAs MESFETs at this composition impractical, has been over-come by using thin A10.48In0.52As layers between gate metal and GaInAs active layers. A10.481n0.52As has also been exploited in the form of buffer layers. The double heterostructure FET wafers with single crystal Al gate metal were grown by molecular beam epitaxy (MBE). The 2.75 µm gate length MESFETs showed d.c. transconductance gm = 57 mS mm-1 in spite of nonoptimized dimensions.

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Double Heterostructure Ga0.47In0.53As MESFETs by MBE

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