Double graphene-layer structures for adaptive devices

V. Mitin, V. Ryzhii, T. Otsuji, M. Ryzhii, M. S. Shur

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Among different carbon materials (diamond, graphite, fullerene, carbon nanotubes), graphene and more complex graphene-based structures attracted a considerable attention. The gapless energy spectrum of graphene implies that graphene can absorb and emit photons with rather low energies corresponding to terahertz (THz) and infrared (IR) ranges of the electromagnetic spectrum. In this presentation, the discussion is focused on the double-graphene-layer (double-GL) structures. In these structures, GLs are separated by a barrier layer (Boron Nitride, Silicon Carbide, and so on). Applying voltage between GLs, one can realize the situation when one GL is filled with electrons while the other is filled with holes. The variation of the applied voltage leads to the variations of the Fermi energies and, hence, to the change of the interband and intraband absorption of electromagnetic radiation and to the variation of the tunneling current. The plasma oscillations in double-GL structures exhibit interesting features. This is mainly because each GL serves as the gate for the other GL. The spectrum of the plasma oscillations in the double-GL structures falls into the terahertz range (THz) of frequencies and can be effectively controlled by the bias voltage. In this paper, we discuss the effects of the excitation of the plasma oscillations by incoming THz radiation and by optical radiation of two lasers with close frequencies as well as negative differential conductivity of the N-type and Z-type. These effects can be used in resonant THz detectors and THz photomixers. The models of devices based on double-GL structures as well as their characteristics are discussed.

Original languageEnglish
Title of host publicationMicro- and Nanotechnology Sensors, Systems, and Applications VI
PublisherSPIE
ISBN (Print)9781628410204
DOIs
Publication statusPublished - 2014 Jan 1
EventMicro- and Nanotechnology Sensors, Systems, and Applications VI - Baltimore, MD, United States
Duration: 2014 May 52014 May 9

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume9083
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Other

OtherMicro- and Nanotechnology Sensors, Systems, and Applications VI
CountryUnited States
CityBaltimore, MD
Period14/5/514/5/9

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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