Doping properties of ZnO thin films for photovoltaic devices grown by URT-IP (ion plating) method

K. Iwata, T. Sakemi, A. Yamada, P. Fons, K. Awai, T. Yamamoto, M. Matsubara, H. Tampo, K. Sakurai, S. Ishizuka, S. Niki

Research output: Contribution to journalConference articlepeer-review

22 Citations (Scopus)

Abstract

The Uramoto-gun with Tanaka magnetic field (URT)-ion plating (IP) method is a novel ion plating technique for thin film deposition. This method offers the advantage of low-ion damage, low deposition temperatures, large area deposition and high growth rates. Ga-doped ZnO thin films were grown using the URT-IP method, and the doping properties were evaluated. The opposing goals of low Ga composition and low resistivity are required for industrial applications of transparent conductive oxide (TCO). We have carried out a comparison between the carrier concentration and Ga atomic concentration in Ga-doped ZnO thin films and found the trade-off point for optimal TCO performance. The optimum growth conditions were obtained using a 3% Ga2O3 content ZnO target.

Original languageEnglish
Pages (from-to)219-223
Number of pages5
JournalThin Solid Films
Volume451-452
DOIs
Publication statusPublished - 2004 Mar 22
EventProceedings of Symposium D on Thin Film and Nano-Structured - Strasbourg, France
Duration: 2003 Jun 102003 Jun 13

Keywords

  • II-VI
  • Ion plating
  • Transparent conductive oxide
  • Zinc oxide
  • ZnO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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