TY - JOUR
T1 - Doping properties of ZnO thin films for photovoltaic devices grown by URT-IP (ion plating) method
AU - Iwata, K.
AU - Sakemi, T.
AU - Yamada, A.
AU - Fons, P.
AU - Awai, K.
AU - Yamamoto, T.
AU - Matsubara, M.
AU - Tampo, H.
AU - Sakurai, K.
AU - Ishizuka, S.
AU - Niki, S.
N1 - Funding Information:
The authors would like to thank Prof. S. Shirakata, Prof. K. Yoshino, Prof. T. Ikari, Dr T. Yajima, Dr T. Nagase, Dr T. Terasako, Dr K. Nishida and Prof. T. Nakata for useful discussions. This research was sponsored the Shikoku consortium grant from the Ministry of Economy, Trade and Industry.
PY - 2004/3/22
Y1 - 2004/3/22
N2 - The Uramoto-gun with Tanaka magnetic field (URT)-ion plating (IP) method is a novel ion plating technique for thin film deposition. This method offers the advantage of low-ion damage, low deposition temperatures, large area deposition and high growth rates. Ga-doped ZnO thin films were grown using the URT-IP method, and the doping properties were evaluated. The opposing goals of low Ga composition and low resistivity are required for industrial applications of transparent conductive oxide (TCO). We have carried out a comparison between the carrier concentration and Ga atomic concentration in Ga-doped ZnO thin films and found the trade-off point for optimal TCO performance. The optimum growth conditions were obtained using a 3% Ga2O3 content ZnO target.
AB - The Uramoto-gun with Tanaka magnetic field (URT)-ion plating (IP) method is a novel ion plating technique for thin film deposition. This method offers the advantage of low-ion damage, low deposition temperatures, large area deposition and high growth rates. Ga-doped ZnO thin films were grown using the URT-IP method, and the doping properties were evaluated. The opposing goals of low Ga composition and low resistivity are required for industrial applications of transparent conductive oxide (TCO). We have carried out a comparison between the carrier concentration and Ga atomic concentration in Ga-doped ZnO thin films and found the trade-off point for optimal TCO performance. The optimum growth conditions were obtained using a 3% Ga2O3 content ZnO target.
KW - II-VI
KW - Ion plating
KW - Transparent conductive oxide
KW - Zinc oxide
KW - ZnO
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U2 - 10.1016/j.tsf.2003.10.095
DO - 10.1016/j.tsf.2003.10.095
M3 - Conference article
AN - SCOPUS:10744232586
SN - 0040-6090
VL - 451-452
SP - 219
EP - 223
JO - Thin Solid Films
JF - Thin Solid Films
T2 - Proceedings of Symposium D on Thin Film and Nano-Structured
Y2 - 10 June 2003 through 13 June 2003
ER -
