Doping optimization in InGaAsP DH lasers and improved characteristics in BH lasers grown by MOVPE

T. Sasaki, H. Yamada, S. Takano, M. Kitamura, I. Mito, T. Suzuki, H. Hoshino

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Zn doping optimization in the cladding layer of InGaAsP/InP DH LDs grown by MOVPE is reported. High Zn doping concentration in the p-InP cladding layer deteriorated the threshold current density and the differential quantum efficiency, which is attributed to Zn diffusion to the active layers. Under optimized Zn doping conditions, 1.5 μm InGaAsP/InP DC-PBH LDs grown entirely by MOVPE are reported with a maximum light output of 46 mW.

Original languageEnglish
Pages (from-to)838-842
Number of pages5
JournalJournal of Crystal Growth
Volume93
Issue number1-4
DOIs
Publication statusPublished - 1988
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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