Doping effects on the stability of stacking faults in silicon crystals

Yutaka Ohno, Yuki Tokumoto, Ichiro Yonenaga

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In silicon crystals annealed at 1173 K, n-type dopant atoms segregate nearby a stacking fault ribbon bound by a pair of partial dislocations and the width of the ribbon is increased. The origin of the width increase is the reduction of the stacking fault energy due to an electronic interaction between the ribbon and the dopant atoms segregating at the ribbon, rather than the reduction of the strain energy around the partial dislocations due to the dopant atoms segregating at the partials.

Original languageEnglish
Pages (from-to)3296-3299
Number of pages4
JournalThin Solid Films
Volume520
Issue number8
DOIs
Publication statusPublished - 2012 Feb 1

Keywords

  • Dislocations
  • Doping effects
  • Silicon
  • Stacking faults

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Doping effects on the stability of stacking faults in silicon crystals'. Together they form a unique fingerprint.

  • Cite this