Doping effects on the stability of stacking faults in silicon crystals

Yutaka Ohno; Yuki Tokumoto; Ichiro Yonenaga

doi:10.1016/j.tsf.2011.10.050

Doping effects on the stability of stacking faults in silicon crystals

Yutaka Ohno, Yuki Tokumoto, Ichiro Yonenaga

Materials Design Division

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

In silicon crystals annealed at 1173 K, n-type dopant atoms segregate nearby a stacking fault ribbon bound by a pair of partial dislocations and the width of the ribbon is increased. The origin of the width increase is the reduction of the stacking fault energy due to an electronic interaction between the ribbon and the dopant atoms segregating at the ribbon, rather than the reduction of the strain energy around the partial dislocations due to the dopant atoms segregating at the partials.

Original language	English
Pages (from-to)	3296-3299
Number of pages	4
Journal	Thin Solid Films
Volume	520
Issue number	8
DOIs	https://doi.org/10.1016/j.tsf.2011.10.050
Publication status	Published - 2012 Feb 1

Keywords

Dislocations
Doping effects
Silicon
Stacking faults

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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title = "Doping effects on the stability of stacking faults in silicon crystals",

abstract = "In silicon crystals annealed at 1173 K, n-type dopant atoms segregate nearby a stacking fault ribbon bound by a pair of partial dislocations and the width of the ribbon is increased. The origin of the width increase is the reduction of the stacking fault energy due to an electronic interaction between the ribbon and the dopant atoms segregating at the ribbon, rather than the reduction of the strain energy around the partial dislocations due to the dopant atoms segregating at the partials.",

keywords = "Dislocations, Doping effects, Silicon, Stacking faults",

author = "Yutaka Ohno and Yuki Tokumoto and Ichiro Yonenaga",

note = "Funding Information: A part of this work was supported by the Integrated Materials Research Center for a Low-Carbon Society, IMR, Tohoku University , Japan (2010–2011).",

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T1 - Doping effects on the stability of stacking faults in silicon crystals

AU - Ohno, Yutaka

AU - Tokumoto, Yuki

AU - Yonenaga, Ichiro

N1 - Funding Information: A part of this work was supported by the Integrated Materials Research Center for a Low-Carbon Society, IMR, Tohoku University , Japan (2010–2011).

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Y1 - 2012/2/1

N2 - In silicon crystals annealed at 1173 K, n-type dopant atoms segregate nearby a stacking fault ribbon bound by a pair of partial dislocations and the width of the ribbon is increased. The origin of the width increase is the reduction of the stacking fault energy due to an electronic interaction between the ribbon and the dopant atoms segregating at the ribbon, rather than the reduction of the strain energy around the partial dislocations due to the dopant atoms segregating at the partials.

AB - In silicon crystals annealed at 1173 K, n-type dopant atoms segregate nearby a stacking fault ribbon bound by a pair of partial dislocations and the width of the ribbon is increased. The origin of the width increase is the reduction of the stacking fault energy due to an electronic interaction between the ribbon and the dopant atoms segregating at the ribbon, rather than the reduction of the strain energy around the partial dislocations due to the dopant atoms segregating at the partials.

KW - Dislocations

KW - Doping effects

KW - Silicon

KW - Stacking faults

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Doping effects on the stability of stacking faults in silicon crystals

Abstract

Keywords

ASJC Scopus subject areas

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