Doping effect of Dy on leakage current and oxygen sensing property of SrTiO3 thin film prepared by PLD

Naoki Wakiya; Yusuke Kimura; Naonori Sakamoto; Desheng Fu; Toru Hara; Takashi Ishiguro; Takanori Kiguchi; Kazuo Shinozaki; Hisao Suzuki

doi:10.2109/jcersj2.117.1004

Doping effect of Dy on leakage current and oxygen sensing property of SrTiO₃ thin film prepared by PLD

Naoki Wakiya, Yusuke Kimura, Naonori Sakamoto, Desheng Fu, Toru Hara, Takashi Ishiguro, Takanori Kiguchi, Kazuo Shinozaki, Hisao Suzuki

Materials Processing and Characterization Division

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Polycrystalline Dy-doped SrTiO₃ thin films deposited by pulsed laser deposition (PLD) on CeO₂-buffered yttria-stabilized zirconia (YSZ) single crystal substrates showed oxygen sensing characteristics at room temperature. The oxygen gas sensing characteristics depended on the amount of Dy-doping, and 1.5 mol% Dy-doping was most effective. The oxygen gas sensing characteristics were closely related to leakage current characteristics of Dy-doped SrTiO₃ thin film deposited on ZnIn₂O ₂/YSZ/Si(001) substrates. The suppression of leakage current by Dy-doping suggests that Ti⁴⁺ is substituted by Dy³⁺, and the Dy³⁺ acts as an acceptor. Further doping of Dy³⁺ brought about the increase of the leakage current, and it lowered the oxygen gas sensitivity.

Original language	English
Pages (from-to)	1004-1008
Number of pages	5
Journal	Journal of the Ceramic Society of Japan
Volume	117
Issue number	1369
DOIs	https://doi.org/10.2109/jcersj2.117.1004
Publication status	Published - 2009 Sep

Keywords

Dy-doping
Leakage current
Oxygen sensor

ASJC Scopus subject areas

Ceramics and Composites
Chemistry(all)
Condensed Matter Physics
Materials Chemistry

Access to Document

10.2109/jcersj2.117.1004

Cite this

@article{889ce03b3a2e4eafb56e3171f0979d63,

title = "Doping effect of Dy on leakage current and oxygen sensing property of SrTiO3 thin film prepared by PLD",

abstract = "Polycrystalline Dy-doped SrTiO3 thin films deposited by pulsed laser deposition (PLD) on CeO2-buffered yttria-stabilized zirconia (YSZ) single crystal substrates showed oxygen sensing characteristics at room temperature. The oxygen gas sensing characteristics depended on the amount of Dy-doping, and 1.5 mol% Dy-doping was most effective. The oxygen gas sensing characteristics were closely related to leakage current characteristics of Dy-doped SrTiO3 thin film deposited on ZnIn2O 2/YSZ/Si(001) substrates. The suppression of leakage current by Dy-doping suggests that Ti4+ is substituted by Dy3+, and the Dy3+ acts as an acceptor. Further doping of Dy3+ brought about the increase of the leakage current, and it lowered the oxygen gas sensitivity.",

keywords = "Dy-doping, Leakage current, Oxygen sensor",

author = "Naoki Wakiya and Yusuke Kimura and Naonori Sakamoto and Desheng Fu and Toru Hara and Takashi Ishiguro and Takanori Kiguchi and Kazuo Shinozaki and Hisao Suzuki",

year = "2009",

month = sep,

doi = "10.2109/jcersj2.117.1004",

language = "English",

volume = "117",

pages = "1004--1008",

journal = "Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan",

issn = "1882-0743",

publisher = "Ceramic Society of Japan/Nippon Seramikkusu Kyokai",

number = "1369",

}

TY - JOUR

T1 - Doping effect of Dy on leakage current and oxygen sensing property of SrTiO3 thin film prepared by PLD

AU - Wakiya, Naoki

AU - Kimura, Yusuke

AU - Sakamoto, Naonori

AU - Fu, Desheng

AU - Hara, Toru

AU - Ishiguro, Takashi

AU - Kiguchi, Takanori

AU - Shinozaki, Kazuo

AU - Suzuki, Hisao

PY - 2009/9

Y1 - 2009/9

N2 - Polycrystalline Dy-doped SrTiO3 thin films deposited by pulsed laser deposition (PLD) on CeO2-buffered yttria-stabilized zirconia (YSZ) single crystal substrates showed oxygen sensing characteristics at room temperature. The oxygen gas sensing characteristics depended on the amount of Dy-doping, and 1.5 mol% Dy-doping was most effective. The oxygen gas sensing characteristics were closely related to leakage current characteristics of Dy-doped SrTiO3 thin film deposited on ZnIn2O 2/YSZ/Si(001) substrates. The suppression of leakage current by Dy-doping suggests that Ti4+ is substituted by Dy3+, and the Dy3+ acts as an acceptor. Further doping of Dy3+ brought about the increase of the leakage current, and it lowered the oxygen gas sensitivity.

AB - Polycrystalline Dy-doped SrTiO3 thin films deposited by pulsed laser deposition (PLD) on CeO2-buffered yttria-stabilized zirconia (YSZ) single crystal substrates showed oxygen sensing characteristics at room temperature. The oxygen gas sensing characteristics depended on the amount of Dy-doping, and 1.5 mol% Dy-doping was most effective. The oxygen gas sensing characteristics were closely related to leakage current characteristics of Dy-doped SrTiO3 thin film deposited on ZnIn2O 2/YSZ/Si(001) substrates. The suppression of leakage current by Dy-doping suggests that Ti4+ is substituted by Dy3+, and the Dy3+ acts as an acceptor. Further doping of Dy3+ brought about the increase of the leakage current, and it lowered the oxygen gas sensitivity.

KW - Dy-doping

KW - Leakage current

KW - Oxygen sensor

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U2 - 10.2109/jcersj2.117.1004

DO - 10.2109/jcersj2.117.1004

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VL - 117

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EP - 1008

JO - Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan

JF - Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan

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