Doping effect of Dy on leakage current and oxygen sensing property of SrTiO3 thin film prepared by PLD

Naoki Wakiya, Yusuke Kimura, Naonori Sakamoto, Desheng Fu, Toru Hara, Takashi Ishiguro, Takanori Kiguchi, Kazuo Shinozaki, Hisao Suzuki

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Polycrystalline Dy-doped SrTiO3 thin films deposited by pulsed laser deposition (PLD) on CeO2-buffered yttria-stabilized zirconia (YSZ) single crystal substrates showed oxygen sensing characteristics at room temperature. The oxygen gas sensing characteristics depended on the amount of Dy-doping, and 1.5 mol% Dy-doping was most effective. The oxygen gas sensing characteristics were closely related to leakage current characteristics of Dy-doped SrTiO3 thin film deposited on ZnIn2O 2/YSZ/Si(001) substrates. The suppression of leakage current by Dy-doping suggests that Ti4+ is substituted by Dy3+, and the Dy3+ acts as an acceptor. Further doping of Dy3+ brought about the increase of the leakage current, and it lowered the oxygen gas sensitivity.

Original languageEnglish
Pages (from-to)1004-1008
Number of pages5
JournalJournal of the Ceramic Society of Japan
Volume117
Issue number1369
DOIs
Publication statusPublished - 2009 Sep

Keywords

  • Dy-doping
  • Leakage current
  • Oxygen sensor

ASJC Scopus subject areas

  • Ceramics and Composites
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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    Wakiya, N., Kimura, Y., Sakamoto, N., Fu, D., Hara, T., Ishiguro, T., Kiguchi, T., Shinozaki, K., & Suzuki, H. (2009). Doping effect of Dy on leakage current and oxygen sensing property of SrTiO3 thin film prepared by PLD. Journal of the Ceramic Society of Japan, 117(1369), 1004-1008. https://doi.org/10.2109/jcersj2.117.1004