Doped In-Ge-Te phase change memory featuring stable operation and good data retention

T. Morikawa; K. Kurotsuchi; M. Kinoshita; N. Matsuzaki; Y. Matsui; Y. Fujisaki; S. Hanzawa; A. Kotabe; M. Terao; H. Moriya; T. Iwasaki; M. Matsuoka; F. Nitta; Masahiro Moniwa; T. Koga; N. Takaura

doi:10.1109/IEDM.2007.4418932

Doped In-Ge-Te phase change memory featuring stable operation and good data retention

T. Morikawa, K. Kurotsuchi, M. Kinoshita, N. Matsuzaki, Y. Matsui, Y. Fujisaki, S. Hanzawa, A. Kotabe, M. Terao, H. Moriya, T. Iwasaki, M. Matsuoka, F. Nitta, Masahiro Moniwa, T. Koga, N. Takaura

Research output: Contribution to journal › Conference article › peer-review

47 Citations (Scopus)

Abstract

We have fabricated a phase change memory using doped In-Ge-Te to improve the data retention required for industrial and automotive use. This chalcogenide features higher thermal stability as well as denser texture and improved adhesion. The memory cell using doped In-Ge-Te provided a larger read margin and better data retention than conventional Ge₂Sb₂Te ₅, and we demonstrated 10-year retention at temperatures above 150°C, which is the highest temperature ever reported.

Original language	English
Article number	4418932
Pages (from-to)	307-310
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
DOIs	https://doi.org/10.1109/IEDM.2007.4418932
Publication status	Published - 2007 Dec 1
Event	2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States Duration: 2007 Dec 10 → 2007 Dec 12

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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Morikawa, T., Kurotsuchi, K., Kinoshita, M., Matsuzaki, N., Matsui, Y., Fujisaki, Y., Hanzawa, S., Kotabe, A., Terao, M., Moriya, H., Iwasaki, T., Matsuoka, M., Nitta, F., Moniwa, M., Koga, T., & Takaura, N. (2007). Doped In-Ge-Te phase change memory featuring stable operation and good data retention. Technical Digest - International Electron Devices Meeting, IEDM, 307-310. [4418932]. https://doi.org/10.1109/IEDM.2007.4418932

Morikawa, T, Kurotsuchi, K, Kinoshita, M, Matsuzaki, N, Matsui, Y, Fujisaki, Y, Hanzawa, S, Kotabe, A, Terao, M, Moriya, H, Iwasaki, T, Matsuoka, M, Nitta, F, Moniwa, M, Koga, T & Takaura, N 2007, 'Doped In-Ge-Te phase change memory featuring stable operation and good data retention', Technical Digest - International Electron Devices Meeting, IEDM, pp. 307-310. https://doi.org/10.1109/IEDM.2007.4418932

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abstract = "We have fabricated a phase change memory using doped In-Ge-Te to improve the data retention required for industrial and automotive use. This chalcogenide features higher thermal stability as well as denser texture and improved adhesion. The memory cell using doped In-Ge-Te provided a larger read margin and better data retention than conventional Ge2Sb2Te 5, and we demonstrated 10-year retention at temperatures above 150°C, which is the highest temperature ever reported.",

author = "T. Morikawa and K. Kurotsuchi and M. Kinoshita and N. Matsuzaki and Y. Matsui and Y. Fujisaki and S. Hanzawa and A. Kotabe and M. Terao and H. Moriya and T. Iwasaki and M. Matsuoka and F. Nitta and Masahiro Moniwa and T. Koga and N. Takaura",

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language = "English",

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T1 - Doped In-Ge-Te phase change memory featuring stable operation and good data retention

AU - Morikawa, T.

AU - Kurotsuchi, K.

AU - Kinoshita, M.

AU - Matsuzaki, N.

AU - Matsui, Y.

AU - Fujisaki, Y.

AU - Hanzawa, S.

AU - Kotabe, A.

AU - Terao, M.

AU - Moriya, H.

AU - Iwasaki, T.

AU - Matsuoka, M.

AU - Nitta, F.

AU - Moniwa, Masahiro

AU - Koga, T.

AU - Takaura, N.

PY - 2007/12/1

Y1 - 2007/12/1

N2 - We have fabricated a phase change memory using doped In-Ge-Te to improve the data retention required for industrial and automotive use. This chalcogenide features higher thermal stability as well as denser texture and improved adhesion. The memory cell using doped In-Ge-Te provided a larger read margin and better data retention than conventional Ge2Sb2Te 5, and we demonstrated 10-year retention at temperatures above 150°C, which is the highest temperature ever reported.

AB - We have fabricated a phase change memory using doped In-Ge-Te to improve the data retention required for industrial and automotive use. This chalcogenide features higher thermal stability as well as denser texture and improved adhesion. The memory cell using doped In-Ge-Te provided a larger read margin and better data retention than conventional Ge2Sb2Te 5, and we demonstrated 10-year retention at temperatures above 150°C, which is the highest temperature ever reported.

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T2 - 2007 IEEE International Electron Devices Meeting, IEDM

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Doped In-Ge-Te phase change memory featuring stable operation and good data retention

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