Doped In-Ge-Te phase change memory featuring stable operation and good data retention

T. Morikawa, K. Kurotsuchi, M. Kinoshita, N. Matsuzaki, Y. Matsui, Y. Fujisaki, S. Hanzawa, A. Kotabe, M. Terao, H. Moriya, T. Iwasaki, M. Matsuoka, F. Nitta, Masahiro Moniwa, T. Koga, N. Takaura

    Research output: Contribution to journalConference article

    35 Citations (Scopus)

    Abstract

    We have fabricated a phase change memory using doped In-Ge-Te to improve the data retention required for industrial and automotive use. This chalcogenide features higher thermal stability as well as denser texture and improved adhesion. The memory cell using doped In-Ge-Te provided a larger read margin and better data retention than conventional Ge2Sb2Te 5, and we demonstrated 10-year retention at temperatures above 150°C, which is the highest temperature ever reported.

    Original languageEnglish
    Article number4418932
    Pages (from-to)307-310
    Number of pages4
    JournalTechnical Digest - International Electron Devices Meeting, IEDM
    DOIs
    Publication statusPublished - 2007 Dec 1
    Event2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States
    Duration: 2007 Dec 102007 Dec 12

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry

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  • Cite this

    Morikawa, T., Kurotsuchi, K., Kinoshita, M., Matsuzaki, N., Matsui, Y., Fujisaki, Y., Hanzawa, S., Kotabe, A., Terao, M., Moriya, H., Iwasaki, T., Matsuoka, M., Nitta, F., Moniwa, M., Koga, T., & Takaura, N. (2007). Doped In-Ge-Te phase change memory featuring stable operation and good data retention. Technical Digest - International Electron Devices Meeting, IEDM, 307-310. [4418932]. https://doi.org/10.1109/IEDM.2007.4418932