Doped In-Ge-Te phase change memory featuring stable operation and good data retention

T. Morikawa; K. Kurotsuchi; M. Kinoshita; N. Matsuzaki; Y. Matsui; Y. Fujisaki; S. Hanzawa; A. Kotabe; M. Terao; H. Moriya; T. Iwasaki; M. Matsuoka; F. Nitta; Masahiro Moniwa; T. Koga; N. Takaura

doi:10.1109/IEDM.2007.4418932

Doped In-Ge-Te phase change memory featuring stable operation and good data retention

T. Morikawa, K. Kurotsuchi, M. Kinoshita, N. Matsuzaki, Y. Matsui, Y. Fujisaki, S. Hanzawa, A. Kotabe, M. Terao, H. Moriya, T. Iwasaki, M. Matsuoka, F. Nitta, Masahiro Moniwa, T. Koga, N. Takaura

Research output: Contribution to journal › Conference article › peer-review

39 Citations (Scopus)

Abstract

We have fabricated a phase change memory using doped In-Ge-Te to improve the data retention required for industrial and automotive use. This chalcogenide features higher thermal stability as well as denser texture and improved adhesion. The memory cell using doped In-Ge-Te provided a larger read margin and better data retention than conventional Ge₂Sb₂Te ₅, and we demonstrated 10-year retention at temperatures above 150°C, which is the highest temperature ever reported.

Original language	English
Article number	4418932
Pages (from-to)	307-310
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
DOIs	https://doi.org/10.1109/IEDM.2007.4418932
Publication status	Published - 2007 Dec 1
Event	2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States Duration: 2007 Dec 10 → 2007 Dec 12

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM.2007.4418932

Cite this

Morikawa, T., Kurotsuchi, K., Kinoshita, M., Matsuzaki, N., Matsui, Y., Fujisaki, Y., Hanzawa, S., Kotabe, A., Terao, M., Moriya, H., Iwasaki, T., Matsuoka, M., Nitta, F., Moniwa, M., Koga, T., & Takaura, N. (2007). Doped In-Ge-Te phase change memory featuring stable operation and good data retention. Technical Digest - International Electron Devices Meeting, IEDM, 307-310. [4418932]. https://doi.org/10.1109/IEDM.2007.4418932

Doped In-Ge-Te phase change memory featuring stable operation and good data retention. / Morikawa, T.; Kurotsuchi, K.; Kinoshita, M.; Matsuzaki, N.; Matsui, Y.; Fujisaki, Y.; Hanzawa, S.; Kotabe, A.; Terao, M.; Moriya, H.; Iwasaki, T.; Matsuoka, M.; Nitta, F.; Moniwa, Masahiro; Koga, T.; Takaura, N.

In: Technical Digest - International Electron Devices Meeting, IEDM, 01.12.2007, p. 307-310.

Research output: Contribution to journal › Conference article › peer-review

Morikawa, T, Kurotsuchi, K, Kinoshita, M, Matsuzaki, N, Matsui, Y, Fujisaki, Y, Hanzawa, S, Kotabe, A, Terao, M, Moriya, H, Iwasaki, T, Matsuoka, M, Nitta, F, Moniwa, M, Koga, T & Takaura, N 2007, 'Doped In-Ge-Te phase change memory featuring stable operation and good data retention', Technical Digest - International Electron Devices Meeting, IEDM, pp. 307-310. https://doi.org/10.1109/IEDM.2007.4418932

Morikawa, T. ; Kurotsuchi, K. ; Kinoshita, M. ; Matsuzaki, N. ; Matsui, Y. ; Fujisaki, Y. ; Hanzawa, S. ; Kotabe, A. ; Terao, M. ; Moriya, H. ; Iwasaki, T. ; Matsuoka, M. ; Nitta, F. ; Moniwa, Masahiro ; Koga, T. ; Takaura, N. / Doped In-Ge-Te phase change memory featuring stable operation and good data retention. In: Technical Digest - International Electron Devices Meeting, IEDM. 2007 ; pp. 307-310.

@article{fc9a7ea0e4604c32815dd5dbdabc4a97,

title = "Doped In-Ge-Te phase change memory featuring stable operation and good data retention",

abstract = "We have fabricated a phase change memory using doped In-Ge-Te to improve the data retention required for industrial and automotive use. This chalcogenide features higher thermal stability as well as denser texture and improved adhesion. The memory cell using doped In-Ge-Te provided a larger read margin and better data retention than conventional Ge2Sb2Te 5, and we demonstrated 10-year retention at temperatures above 150°C, which is the highest temperature ever reported.",

author = "T. Morikawa and K. Kurotsuchi and M. Kinoshita and N. Matsuzaki and Y. Matsui and Y. Fujisaki and S. Hanzawa and A. Kotabe and M. Terao and H. Moriya and T. Iwasaki and M. Matsuoka and F. Nitta and Masahiro Moniwa and T. Koga and N. Takaura",

year = "2007",

month = dec,

day = "1",

doi = "10.1109/IEDM.2007.4418932",

language = "English",

pages = "307--310",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2007 IEEE International Electron Devices Meeting, IEDM ; Conference date: 10-12-2007 Through 12-12-2007",

}

TY - JOUR

T1 - Doped In-Ge-Te phase change memory featuring stable operation and good data retention

AU - Morikawa, T.

AU - Kurotsuchi, K.

AU - Kinoshita, M.

AU - Matsuzaki, N.

AU - Matsui, Y.

AU - Fujisaki, Y.

AU - Hanzawa, S.

AU - Kotabe, A.

AU - Terao, M.

AU - Moriya, H.

AU - Iwasaki, T.

AU - Matsuoka, M.

AU - Nitta, F.

AU - Moniwa, Masahiro

AU - Koga, T.

AU - Takaura, N.

PY - 2007/12/1

Y1 - 2007/12/1

N2 - We have fabricated a phase change memory using doped In-Ge-Te to improve the data retention required for industrial and automotive use. This chalcogenide features higher thermal stability as well as denser texture and improved adhesion. The memory cell using doped In-Ge-Te provided a larger read margin and better data retention than conventional Ge2Sb2Te 5, and we demonstrated 10-year retention at temperatures above 150°C, which is the highest temperature ever reported.

AB - We have fabricated a phase change memory using doped In-Ge-Te to improve the data retention required for industrial and automotive use. This chalcogenide features higher thermal stability as well as denser texture and improved adhesion. The memory cell using doped In-Ge-Te provided a larger read margin and better data retention than conventional Ge2Sb2Te 5, and we demonstrated 10-year retention at temperatures above 150°C, which is the highest temperature ever reported.

UR - http://www.scopus.com/inward/record.url?scp=50249088057&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=50249088057&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2007.4418932

DO - 10.1109/IEDM.2007.4418932

M3 - Conference article

AN - SCOPUS:50249088057

SP - 307

EP - 310

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

SN - 0163-1918

M1 - 4418932

T2 - 2007 IEEE International Electron Devices Meeting, IEDM

Y2 - 10 December 2007 through 12 December 2007

ER -

Doped In-Ge-Te phase change memory featuring stable operation and good data retention

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this