Dopant selection for control of charge carrier density and mobility in amorphous indium oxide thin-film transistors: Comparison between Si- and W-dopants

Nobuhiko Mitoma; Shinya Aikawa; Wei Ou-Yang; Xu Gao; Takio Kizu; Meng Fang Lin; Akihiko Fujiwara; Toshihide Nabatame; Kazuhito Tsukagoshi

doi:10.1063/1.4907285

Dopant selection for control of charge carrier density and mobility in amorphous indium oxide thin-film transistors: Comparison between Si- and W-dopants

Nobuhiko Mitoma, Shinya Aikawa, Wei Ou-Yang, Xu Gao, Takio Kizu, Meng Fang Lin, Akihiko Fujiwara, Toshihide Nabatame, Kazuhito Tsukagoshi

Research output: Contribution to journal › Article › peer-review

35 Citations (Scopus)

Abstract

The dependence of oxygen vacancy suppression on dopant species in amorphous indium oxide (a-InO_x) thin film transistors (TFTs) is reported. In a-InO_x TFTs incorporating equivalent atom densities of Si- and W-dopants, absorption of oxygen in the host a-InO_x matrix was found to depend on difference of Gibbs free energy of the dopants for oxidation. For fully oxidized films, the extracted channel conductivity was higher in the a-InO_x TFTs containing dopants of small ionic radius. This can be explained by a reduction in the ionic scattering cross sectional area caused by charge screening effects.

Original language	English
Article number	042106
Journal	Applied Physics Letters
Volume	106
Issue number	4
DOIs	https://doi.org/10.1063/1.4907285
Publication status	Published - 2015 Jan 26
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4907285

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Dopant selection for control of charge carrier density and mobility in amorphous indium oxide thin-film transistors : Comparison between Si- and W-dopants. / Mitoma, Nobuhiko; Aikawa, Shinya; Ou-Yang, Wei; Gao, Xu; Kizu, Takio; Lin, Meng Fang; Fujiwara, Akihiko; Nabatame, Toshihide; Tsukagoshi, Kazuhito.

In: Applied Physics Letters, Vol. 106, No. 4, 042106, 26.01.2015.

Research output: Contribution to journal › Article › peer-review

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abstract = "The dependence of oxygen vacancy suppression on dopant species in amorphous indium oxide (a-InOx) thin film transistors (TFTs) is reported. In a-InOx TFTs incorporating equivalent atom densities of Si- and W-dopants, absorption of oxygen in the host a-InOx matrix was found to depend on difference of Gibbs free energy of the dopants for oxidation. For fully oxidized films, the extracted channel conductivity was higher in the a-InOx TFTs containing dopants of small ionic radius. This can be explained by a reduction in the ionic scattering cross sectional area caused by charge screening effects.",

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AU - Gao, Xu

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