Abstract
The dependence of oxygen vacancy suppression on dopant species in amorphous indium oxide (a-InOx) thin film transistors (TFTs) is reported. In a-InOx TFTs incorporating equivalent atom densities of Si- and W-dopants, absorption of oxygen in the host a-InOx matrix was found to depend on difference of Gibbs free energy of the dopants for oxidation. For fully oxidized films, the extracted channel conductivity was higher in the a-InOx TFTs containing dopants of small ionic radius. This can be explained by a reduction in the ionic scattering cross sectional area caused by charge screening effects.
Original language | English |
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Article number | 042106 |
Journal | Applied Physics Letters |
Volume | 106 |
Issue number | 4 |
DOIs | |
Publication status | Published - 2015 Jan 26 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)