Dopant-segregation-controlled ZnO single-grain-boundary varistors

Yukio Sato; Masatada Yodogawa; Takahisa Yamamoto; Naoya Shibata; Yuichi Ikuhara

doi:10.1063/1.1899762

Dopant-segregation-controlled ZnO single-grain-boundary varistors

Yukio Sato, Masatada Yodogawa, Takahisa Yamamoto, Naoya Shibata, Yuichi Ikuhara

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

A ZnO single-grain-boundary varistor was designed using a bicrystal. Pr and Co dopant cosegregation at the boundary, key to obtain high varistic property, is optimized by controlling grain-boundary misorientation and, hence, grain-boundary atomic structure. Thus obtained single grain boundary exhibited sufficiently high varistic property. The present result opens up the possibility of single-grain-boundary varistors required for future nanoscale electronic devices.

Original language	English
Article number	152112
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	15
DOIs	https://doi.org/10.1063/1.1899762
Publication status	Published - 2005
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1899762

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@article{5bd0c9de025a4b57b95788a3ce1accbe,

title = "Dopant-segregation-controlled ZnO single-grain-boundary varistors",

abstract = "A ZnO single-grain-boundary varistor was designed using a bicrystal. Pr and Co dopant cosegregation at the boundary, key to obtain high varistic property, is optimized by controlling grain-boundary misorientation and, hence, grain-boundary atomic structure. Thus obtained single grain boundary exhibited sufficiently high varistic property. The present result opens up the possibility of single-grain-boundary varistors required for future nanoscale electronic devices.",

author = "Yukio Sato and Masatada Yodogawa and Takahisa Yamamoto and Naoya Shibata and Yuichi Ikuhara",

note = "Funding Information: The authors thank Dr. F. Oba in Kyoto University for useful discussions. This study was financially supported by a Grant-in-Aid for Scientific Research and Special Coordination Funds from the Ministry of Education, Culture, Sports, Science and Technology, and Japan Society of Promotion of Science (JSPS), Japan. One of the authors (Y.S.) is supported as a JSPS research fellow.",

year = "2005",

doi = "10.1063/1.1899762",

language = "English",

volume = "86",

pages = "1--3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "15",

}

TY - JOUR

T1 - Dopant-segregation-controlled ZnO single-grain-boundary varistors

AU - Sato, Yukio

AU - Yodogawa, Masatada

AU - Yamamoto, Takahisa

AU - Shibata, Naoya

AU - Ikuhara, Yuichi

N1 - Funding Information: The authors thank Dr. F. Oba in Kyoto University for useful discussions. This study was financially supported by a Grant-in-Aid for Scientific Research and Special Coordination Funds from the Ministry of Education, Culture, Sports, Science and Technology, and Japan Society of Promotion of Science (JSPS), Japan. One of the authors (Y.S.) is supported as a JSPS research fellow.

PY - 2005

Y1 - 2005

N2 - A ZnO single-grain-boundary varistor was designed using a bicrystal. Pr and Co dopant cosegregation at the boundary, key to obtain high varistic property, is optimized by controlling grain-boundary misorientation and, hence, grain-boundary atomic structure. Thus obtained single grain boundary exhibited sufficiently high varistic property. The present result opens up the possibility of single-grain-boundary varistors required for future nanoscale electronic devices.

AB - A ZnO single-grain-boundary varistor was designed using a bicrystal. Pr and Co dopant cosegregation at the boundary, key to obtain high varistic property, is optimized by controlling grain-boundary misorientation and, hence, grain-boundary atomic structure. Thus obtained single grain boundary exhibited sufficiently high varistic property. The present result opens up the possibility of single-grain-boundary varistors required for future nanoscale electronic devices.

UR - http://www.scopus.com/inward/record.url?scp=20844455892&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=20844455892&partnerID=8YFLogxK

U2 - 10.1063/1.1899762

DO - 10.1063/1.1899762

M3 - Article

AN - SCOPUS:20844455892

SN - 0003-6951

VL - 86

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

M1 - 152112

ER -

Dopant-segregation-controlled ZnO single-grain-boundary varistors

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