Abstract
Dopant redistribution during gate oxidation is investigated, where the enhancement of the diffusion due to implantation damage and that due to oxidation occur simultaneously. Dopant profiles after the gate oxidation are measured for various oxidation times, and they are compared to the profiles after the N2-annealings. From the results, it is concluded that, for typical gate oxidation conditions (oxide thickness less than 100angstrom), the enhancement due to oxidation is small, and the dopant redistribution is initially dominated by the damage-enhanced diffusion.
| Original language | English |
|---|---|
| Pages (from-to) | 795-798 |
| Number of pages | 4 |
| Journal | Technical Digest - International Electron Devices Meeting |
| Publication status | Published - 1996 Dec 1 |
| Externally published | Yes |
| Event | Proceedings of the 1996 IEEE International Electron Devices Meeting - San Francisco, CA, USA Duration: 1996 Dec 8 → 1996 Dec 11 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
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Uchida, T., Eikyu, K., Fujinaga, M., Teramoto, A., & Miyoshi, H. (1996). Dopant redistribution during gate oxidation including transient enhanced diffusion in oxidizing ambient. Technical Digest - International Electron Devices Meeting, 795-798.