Dopant Redistribution During Gate Oxidation Including Transient Enhanced Diffusion in Oxidizing Ambient

Tetsuya Uchida; Katsumi Eikyu; Masato Fujinaga; Akinobu Teramoto; Hirokazu Miyoshi

doi:10.1109/IEDM.1996.554099

Dopant Redistribution During Gate Oxidation Including Transient Enhanced Diffusion in Oxidizing Ambient

Tetsuya Uchida, Katsumi Eikyu, Masato Fujinaga, Akinobu Teramoto, Hirokazu Miyoshi

Research output: Contribution to journal › Conference article › peer-review

3 Citations (Scopus)

Abstract

Dopant redistributionduring gate oxidation is investigated, where the enhancement of the diffusion due to implantation damage and that due to okidationoccur simultaneously. Dopant profiles after the gate oxidation are measured for various oxidation times, and they are compared to the profiles after the N₂-annealings. From the results, it is concludedthat, for typical gate oxidation conditions (oxide thickness less than 100Å), the enhancement due to oxidation is small, and the dopant redistribution is initially dominated by the damage-enhanced diffusion.

Original language	English
Pages (from-to)	795-798
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
DOIs	https://doi.org/10.1109/IEDM.1996.554099
Publication status	Published - 1996
Externally published	Yes
Event	Proceedings of the 1996 IEEE International Electron Devices Meeting - San Francisco, CA, USA Duration: 1996 Dec 8 → 1996 Dec 11

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/IEDM.1996.554099

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title = "Dopant Redistribution During Gate Oxidation Including Transient Enhanced Diffusion in Oxidizing Ambient",

abstract = "Dopant redistributionduring gate oxidation is investigated, where the enhancement of the diffusion due to implantation damage and that due to okidationoccur simultaneously. Dopant profiles after the gate oxidation are measured for various oxidation times, and they are compared to the profiles after the N2-annealings. From the results, it is concludedthat, for typical gate oxidation conditions (oxide thickness less than 100{\AA}), the enhancement due to oxidation is small, and the dopant redistribution is initially dominated by the damage-enhanced diffusion.",

author = "Tetsuya Uchida and Katsumi Eikyu and Masato Fujinaga and Akinobu Teramoto and Hirokazu Miyoshi",

note = "Publisher Copyright: {\textcopyright} 1996 IEEE; Proceedings of the 1996 IEEE International Electron Devices Meeting ; Conference date: 08-12-1996 Through 11-12-1996",

year = "1996",

doi = "10.1109/IEDM.1996.554099",

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TY - JOUR

T1 - Dopant Redistribution During Gate Oxidation Including Transient Enhanced Diffusion in Oxidizing Ambient

AU - Uchida, Tetsuya

AU - Eikyu, Katsumi

AU - Fujinaga, Masato

AU - Teramoto, Akinobu

AU - Miyoshi, Hirokazu

PY - 1996

Y1 - 1996

N2 - Dopant redistributionduring gate oxidation is investigated, where the enhancement of the diffusion due to implantation damage and that due to okidationoccur simultaneously. Dopant profiles after the gate oxidation are measured for various oxidation times, and they are compared to the profiles after the N2-annealings. From the results, it is concludedthat, for typical gate oxidation conditions (oxide thickness less than 100Å), the enhancement due to oxidation is small, and the dopant redistribution is initially dominated by the damage-enhanced diffusion.

AB - Dopant redistributionduring gate oxidation is investigated, where the enhancement of the diffusion due to implantation damage and that due to okidationoccur simultaneously. Dopant profiles after the gate oxidation are measured for various oxidation times, and they are compared to the profiles after the N2-annealings. From the results, it is concludedthat, for typical gate oxidation conditions (oxide thickness less than 100Å), the enhancement due to oxidation is small, and the dopant redistribution is initially dominated by the damage-enhanced diffusion.

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DO - 10.1109/IEDM.1996.554099

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EP - 798

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

SN - 0163-1918

T2 - Proceedings of the 1996 IEEE International Electron Devices Meeting

Y2 - 8 December 1996 through 11 December 1996

ER -

Dopant Redistribution During Gate Oxidation Including Transient Enhanced Diffusion in Oxidizing Ambient

Abstract

ASJC Scopus subject areas

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