Dopant redistribution during gate oxidation including transient enhanced diffusion in oxidizing ambient

Tetsuya Uchida, Katsumi Eikyu, Masato Fujinaga, Akinobu Teramoto, Hirokazu Miyoshi

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

Dopant redistribution during gate oxidation is investigated, where the enhancement of the diffusion due to implantation damage and that due to oxidation occur simultaneously. Dopant profiles after the gate oxidation are measured for various oxidation times, and they are compared to the profiles after the N2-annealings. From the results, it is concluded that, for typical gate oxidation conditions (oxide thickness less than 100angstrom), the enhancement due to oxidation is small, and the dopant redistribution is initially dominated by the damage-enhanced diffusion.

Original languageEnglish
Pages (from-to)795-798
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 1996 Dec 1
Externally publishedYes
EventProceedings of the 1996 IEEE International Electron Devices Meeting - San Francisco, CA, USA
Duration: 1996 Dec 81996 Dec 11

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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