Abstract
Nanometer-scale dopant profiling in the vertical ultrathin channels (UTCs) of double-gate metal-oxide-semiconductor field-effect transistors has been performed by using scanning nonlinear dielectric microscopy. UTCs 18-58 nm thick and 175 nm high were formed on a bulk silicon substrate by orientation- dependent wet etching. An n+/p junction was fabricated on the top of the UTC by angled ion implantation. By beveling the UTC with an ultragentle angle, the vertical size of the UTC was amplified by a factor of 86. Using the beveled samples, the channel thickness dependence of the dopant depth profile in the UTC was quantitatively investigated. It was found that a significant dopant loss occurs when the channel thickness is reduced to 18 nm.
Original language | English |
---|---|
Pages (from-to) | 4139-4141 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 85 |
Issue number | 18 |
DOIs | |
Publication status | Published - 2004 Nov 1 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)