Dopant profiling in vertical ultrathin channels of double-gate metal-oxide-semiconductor field-effect transistors by using scanning nonlinear dielectric microscopy

Meishoku Masahara, Shinichi Hosokawa, Takashi Matsukawa, Kazuhiko Endo, Yuuichi Naitou, Hisao Tanoue, Eiichi Suzuki

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)

Abstract

Nanometer-scale dopant profiling in the vertical ultrathin channels (UTCs) of double-gate metal-oxide-semiconductor field-effect transistors has been performed by using scanning nonlinear dielectric microscopy. UTCs 18-58 nm thick and 175 nm high were formed on a bulk silicon substrate by orientation- dependent wet etching. An n+/p junction was fabricated on the top of the UTC by angled ion implantation. By beveling the UTC with an ultragentle angle, the vertical size of the UTC was amplified by a factor of 86. Using the beveled samples, the channel thickness dependence of the dopant depth profile in the UTC was quantitatively investigated. It was found that a significant dopant loss occurs when the channel thickness is reduced to 18 nm.

Original languageEnglish
Pages (from-to)4139-4141
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number18
DOIs
Publication statusPublished - 2004 Nov 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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