Dopant-pair structures segregated on a hydrogen-terminated Si(100) surface

Yuji Suwa, S. Matsuura, M. Fujimori, S. Heike, T. Onogi, H. Kajiyama, T. Hitosugi, K. Kitazawa, T. Uda, T. Hashizume

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

An unfamiliar and novel structure observed on a H-terminated Si(100)-(2x1) surface was reported. It was found that the surface density of the structure was proportional to the substrates dopant density. On the basis of STM results and theoretical calculation, the structure was observed to be a dopant-pair structure segregated from the bulk material and incorporated in the top layer of the Si surface.

Original languageEnglish
Article number156101
Pages (from-to)156101/1-156101/4
JournalPhysical review letters
Volume90
Issue number15
Publication statusPublished - 2003 Apr 18
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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