@article{0ea5ecb8e37944e0aec33f9b282db30b,
title = "Dopant-pair structures segregated on a hydrogen-terminated Si(100) surface",
abstract = "An unfamiliar and novel structure observed on a H-terminated Si(100)-(2x1) surface was reported. It was found that the surface density of the structure was proportional to the substrates dopant density. On the basis of STM results and theoretical calculation, the structure was observed to be a dopant-pair structure segregated from the bulk material and incorporated in the top layer of the Si surface.",
author = "Yuji Suwa and S. Matsuura and M. Fujimori and S. Heike and T. Onogi and H. Kajiyama and T. Hitosugi and K. Kitazawa and T. Uda and T. Hashizume",
note = "Funding Information: Two of the authors, S. M. and K. K., express their thanks to the Japan Science and Technology Corpora?>tion (JST) for support from CREST (Core Research for Evolutional Science and Technology). One of the authors, S. M., acknowledges support by a JSPS Research Fellowship for Young Scientists. This study was performed through Special Coordination Funds for Promoting Science and Technology of the Ministry of Education, Culture, Sports, Science and Technology of the Japanese Government. The theoretical calculations were performed with TAPP (the Tokyo Ab-initio Program Package).",
year = "2003",
month = apr,
day = "18",
language = "English",
volume = "90",
pages = "156101/1--156101/4",
journal = "Physical Review Letters",
issn = "0031-9007",
publisher = "American Physical Society",
number = "15",
}