Dopant distributions in n-MOSFET structure observed by atom probe tomography

K. Inoue, F. Yano, A. Nishida, H. Takamizawa, T. Tsunomura, Y. Nagai, M. Hasegawa

Research output: Contribution to journalArticlepeer-review

81 Citations (Scopus)

Abstract

The dopant distributions in an n-type metal-oxide-semiconductor field effect transistor (MOSFET) structure were analyzed by atom probe tomography. The dopant distributions of As, P, and B atoms in a MOSFET structure (gate, gate oxide, channel, source/drain extension, and halo) were obtained. P atoms were segregated at the interface between the poly-Si gate and the gate oxide, and on the grain boundaries of the poly-Si gate, which had an elongated grain structure along the gate height direction. The concentration of B atoms was enriched near the edge of the source/drain extension where the As atoms were implanted.

Original languageEnglish
Pages (from-to)1479-1484
Number of pages6
JournalUltramicroscopy
Volume109
Issue number12
DOIs
Publication statusPublished - 2009 Nov

Keywords

  • Atom probe tomography
  • Dopant distribution
  • MOSFET

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Instrumentation

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